PBLS6021D_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 12 August 2009 3 of 16
NXP Semiconductors
PBLS6021D
60 V, 1.5 A PNP BISS loadswitch
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
TR1; PNP low V
CEsat
transistor
V
CBO
collector-base voltage open emitter - −60 V
V
CEO
collector-emitter voltage open base - −60 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current - −1.5 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −3A
I
B
base current - −300 mA
I
BM
peak base current single pulse;
t
p
≤ 1ms
- −1A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 370 mW
[2]
- 480 mW
[3]
- 630 mW
TR2; NPN resistor-equipped transistor
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 10 V
V
I
input voltage
positive - +12 V
negative - −10 V
I
O
output current - 100 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1][2]
[3]
- 200 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 480 mW
[2]
- 590 mW
[3]
- 760 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
