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Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
Vishay Siliconix
Si1070X
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
30 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 µA
24.5
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
- 3.81
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.7 1.55 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1nA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
10 µA
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V 6 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 1.2 A
0.082 0.099
V
GS
= 2.5 V, I
D
= 1.0 A
0.116 0.140
Forward Transconductance
g
fs
V
DS
= 15 V, I
D
= 1.2 A
5S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
385
pFOutput Capacitance
C
oss
55
Reverse Transfer Capacitance
C
rss
30
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 5 V, I
D
= 1.2 A
3.8 8.3
nC
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 4.6 A
3.5 4.1
Gate-Source Charge
Q
gs
1.1
Gate-Drain Charge
Q
gd
0.98
Gate Resistance
R
g
f = 1 MHz 4.7 6.2
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 15 V, R
L
= 15
I
D
1.0 A, V
GEN
= 4.5 V, R
g
= 1
10 15
ns
Rise Time
t
r
22 33
Turn-Off DelayTime
t
d(off)
14 21
Fall Time
t
f
69
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
a
I
SM
6A
Body Diode Voltage
V
SD
I
S
= 1.2 A
0.8 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 3.8 A, dI/dt = 100 A/µs
19.4 29.5 nC
Body Diode Reverse Recovery Charge
Q
rr
18.43 27.5
nsReverse Recovery Fall Time
t
a
16.4
Reverse Recovery Rise Time
t
b
3
