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SI1070X-T1-E3

P1-P3P4-P6P7-P8
www.vishay.com
4
Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
Vishay Siliconix
Si1070X
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.001
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1
V
SD
- Source-to-Drain Voltage (V)
)A( tnerruC ecruoS -I
S
T
J
= 150 °C
T
J
= 25 °C
R
DS(on)
vs. V
GS
vs. Temperature
Single Pulse Power
0.00
0.06
0.12
0.18
0.24
012345
T
A
= 25 °C
e (Ω)cnatsiseR-nO -R
)no(SD
GS
- Gate-to-Source Voltage (V)
I
D
= 1.2 A
T
A
= 125 °C
V
) W (
r e w o P
Time (s)
0.0
1.0
2.0
3.0
4.0
5.0
0.01 0.1 1 10 100 1000
Safe Operating Area, Junction-to-Ambient
0.001
10
1
0.1 1 100
0.01
)
A
(tn
e
r
r
uCniarD-
I
D
0.1
V
DS
- Drain-to-Source Voltage (V)
10
T
A
= 25 °C
Single Pulse
Limited by R
DS(on)*
BVDSS Limited
100 ms
DC
1 s
10 s
10 ms
1 ms
100 µs
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
www.vishay.com
5
Vishay Siliconix
Si1070X
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73893
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 100 100010
-1
10
-4
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e f f E d e z i l a m r o N
e c n a d e p m I l a m r e h T
10
-4
10
-3
10
-2
10
-1
1
Single Pulse
0.02
0.05
0.1
0.2
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 540 ° C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Package Information
www.vishay.com
Vishay Siliconix
Revision: 11-Aug-14
1
Document Number: 71612
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SC-89 6-Leads (SOT-563F)
Notes
1. Dimensions in millimeters.
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
6
4
32
4
32
5
4
Caaa
C
M
ddd
A–B D
2x
e
B
6x b
Caaa
2x
D
E/2
E
Cbbb
2x
123
654
E1
E1/2
A
D
e1
L1
L
A
B
C
A1
A1
SECTION B-B
DETAIL “A”
SEE DETAIL “A”
DIM.
MILLIMETERS
MIN. NOM. MAX.
A 0.56 0.58 0.60
A1 0 0.02 0.10
b 0.15 0.22 0.30
c 0.10 0.14 0.18
D 1.50 1.60 1.70
E 1.50 1.60 1.70
E1 1.15 1.20 1.25
e 0.45 0.50 0.55
e1 0.95 1.00 1.05
L 0.25 0.35 0.50
L1 0.10 0.20 0.30
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
P1-P3P4-P6P7-P8

SI1070X-T1-E3

Mfr. #:
Buy SI1070X-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI1070X-GE3
Lifecycle:
New from this manufacturer.
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