© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 4
1 Publication Order Number:
NTLJD4116N/D
NTLJD4116N
Power MOSFET
30 V, 4.6 A, mCoolt Dual N−Channel,
2x2 mm WDFN Package
Features
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
• 2x2 mm Footprint Same as SC−88
• Lowest R
DS(on)
Solution in 2x2 mm Package
• 1.5 V R
DS(on)
Rating for Operation at Low Voltage Gate Drive Logic
Level
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• This is a Pb−Free Device
Applications
• DC−DC Converters (Buck and Boost Circuits)
• Low Side Load Switch
• Optimized for Battery and Load Management Applications in
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
• Level Shift for High Side Load Switch
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
3.7
A
T
A
= 85°C 2.7
t ≤ 5 s T
A
= 25°C 4.6
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
1.5
W
t ≤ 5 s 2.3
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
2.5
A
T
A
= 85°C 1.8
Power Dissipation
(Note 2)
T
A
= 25°C
P
D
0.71 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
20 A
Operating Junction and Storage Temperature T
J
, T
STG
−55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
2.0 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm
2
, 2 oz Cu.
http://onsemi.com
30 V
90 mW @ 2.5 V
70 mW @ 4.5 V
R
DS(on)
MAX
4.6 A
I
D
MAX (Note 1)V
(BR)DSS
125 mW @ 1.8 V
250 mW @ 1.5 V
G
S
N−CHANNEL MOSFET
D
JF = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location
JFMG
G
1
2
3
6
5
4
WDFN6
CASE 506AN
MARKING
DIAGRAM
1
2
3
6
5
4
S1
G1
D2
D1
G2
S2
(Top View)
1
PIN CONNECTIONS
D1
D2
Device Package Shipping
†
ORDERING INFORMATION
NTLJD4116NT1G WDFN6
(Pb−Free)
3000/Tape & Ree
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
