NTLJD4116NT1G

NTLJD4116N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
1
0.14
32
0.1
0.06
0.04
45
1.6
1.2
1.4
1.0
0.8
0.6
10,000
0521
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
1.0
0.06
2.01.5
0.04
0.03
0.02
2.5
Figure 3. On−Resistance versus Drain Current
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
5
−50 50250−25 75 125100
1
21210 304
3
1
2
V
DS
10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 1.8 V
V
GS
= 0 V
I
D
= 2 A
V
GS
= 4.5 V
3
0.07
T
J
= 100°C
T
J
= 150°C
2
0
6
1.5
T
J
= 25°C
20
10
V
GS
= 1.7 V to 8 V
1.5 V
3
1000
4
4
0
4
0.05
0.08
T
J
= 25°C
150
100
100,000
2.5
1.6 V
1.4 V
1.3 V
1.2 V
T
J
= 25°C
V
GS
= 4.5 V
T
J
= −55°C
T
J
= 100°C
0.12
0.13
0.09
0.05
0.07
0.11
V
GS
= 4.5 V
V
GS
= 2.5 V
6 8 14 16 18 22 24 26 28
20.5
NTLJD4116N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
5 5 15 20 25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
400
0
V
GS
V
DS
600
200
010
V
DS
= 0 V
T
J
= 25°C
C
oss
C
rss
800
1000
C
iss
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1 10 100
1000
1
t, TIME (ns)
100
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= 15 V
I
D
= 2.0 A
V
GS
= 4.5 V
3
0
0.3
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
Figure 10. Diode Forward Voltage versus Current
0.9
1
0.6
2
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
30
T
J
= 25°C
T
J
= 125°C
T
J
= 150°C
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0
3
0
Q
G
, TOTAL GATE CHARGE (nC)
5
4
123
I
D
= 2.0 A
T
J
= 25°C
V
GS
Q
GS
6
Q
GD
QT
2
1
54
9
0
18
12
6
3
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
DS
15
0.1 1 100
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
100
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
T
C
= 25°C
T
J
= 150°C
SINGLE PULSE
1 ms
100 ms
10 ms
dc
10 ms
0.1
0.01
−I
D
, DRAIN CURRENT (AMPS)
*See Note 2 on Page 1
V
GS
= 0 V
NTLJD4116N
http://onsemi.com
6
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
Figure 12. Thermal Response
t, TIME (s)
1
1000
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
A
= P
(pk)
R
q
JA
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100 1000100.10.0010.00010.000001
0.1
100
10
10.010.00001
*See Note 2 on Page 1
EFFECTIVE TRANSIENT THERMAL RESISTANCE

NTLJD4116NT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET 2X2 30V 4.6A 70MOHM
Lifecycle:
New from this manufacturer.
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