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IS62WV5128BLL-55TLI

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
01/29/08
IS62WV5128ALL, IS62WV5128BLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions VDD Min. Max. Unit
VOH Output HIGH Voltage IOH = -0.1 mA 1.65-2.2V 1.4 — V
IOH = -1 mA 2.5-3.6V 2.2 — V
VOL Output LOW Voltage IOL = 0.1 mA 1.65-2.2V — 0.2 V
IOL = 2.1 mA 2.5-3.6V — 0.4 V
VIH Input HIGH Voltage 1.65-2.2V 1.4 VDD + 0.2 V
2.5-3.6V 2.2 VDD + 0.3 V
VIL
(1)
Input LOW Voltage 1.65-2.2V –0.2 0.4 V
2.5-3.6V –0.2 0.6 V
ILI Input Leakage GND ≤ VIN ≤ VDD –1 1 µA
ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled –1 1 µA
Notes:
1. VIL (min.) = –1.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.2 to VDD+0.3 V
VDD VDD Related to GND –0.2 to VDD+0.3 V
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.0 W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
OPERATING RANGE (VDD)
Range Ambient Temperature IS62WV5128ALL IS62WV5128BLL
Commercial 0°C to +70°C 1.65V - 2.2V 2.5V - 3.6V
Industrial –40°C to +85°C 1.65V - 2.2V 2.5V - 3.6V
Integrated Silicon Solution, Inc. — www.issi.com
5
Rev. E
01/29/08
IS62WV5128ALL, IS62WV5128BLL
AC TEST LOADS
Figure 1
Figure 2
CAPACITANCE
(1)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 8 pF
COUT Input/Output Capacitance VOUT = 0V 10 pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
AC TEST CONDITIONS
Parameter IS62WV5128ALL IS62WV5128BLL
(Unit) (Unit)
Input Pulse Level 0.4V to VDD-0.2V 0.4V to VDD-0.3V
Input Rise and Fall Times 5 ns 5ns
Input and Output Timing VREF VREF
and Reference Level
Output Load See Figures 1 and 2 See Figures 1 and 2
IS62WV5128ALL IS62WV5128BLL
1.65 - 2.2V 2.5V - 3.6V
R1(Ω) 3070 3070
R2(Ω) 3150 3150
VREF 0.9V 1.5V
VTM 1.8V 2.8V
6
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
01/29/08
IS62WV5128ALL, IS62WV5128BLL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV5128ALL (1.65V - 2.2V)
Symbol Parameter Test Conditions Max. Unit
70 ns
ICC VDD Dynamic Operating VDD = Max., Com. 25 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. 30
I
CC1 Operating Supply VDD = Max., CS1 = 0.2V Com. 10 mA
Current WE = VDD-0.2V Ind. 10
f=1MHZ
ISB1 TTL Standby Current VDD = Max., Com. 0.35 mA
(TTL Inputs) VIN = VIH or VIL Ind. 0.35
CS1 = VIH,
f = 1 MHZ
ISB2 CMOS Standby VDD = Max., Com. 15 µA
Current (CMOS Inputs) CS1
≥
V DD – 0.2V, Ind. 15
VIN
≥
V DD – 0.2V, or
VIN
≤
0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV5128BLL (2.5V - 3.6V)
Symbol Parameter Test Conditions Max. Unit
55 ns
ICC VDD Dynamic Operating VDD = Max., Com. 40 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. 45
ICC1 Operating Supply VDD = Max., CS1 = 0.2V Com. 15 mA
Current WE = VDD-0.2V Ind. 15
f=1MHZ
ISB1 TTL Standby Current VDD = Max., Com. 0.35 mA
(TTL Inputs) VIN = VIH or VIL Ind. 0.35
CS1 = VIH,
f = 1 MHZ
ISB2 CMOS Standby VDD = Max., Com. 15 µA
Current (CMOS Inputs) CS1 ≥ VDD – 0.2V, Ind. 15
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Note:
1. At f = f
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

IS62WV5128BLL-55TLI

Mfr. #:
Buy IS62WV5128BLL-55TLI
Manufacturer:
ISSI
Description:
SRAM 4Mb 512Kx8 55ns Async SRAM
Lifecycle:
New from this manufacturer.
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