BSL215CL6327HTSA1

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

BSL215C

OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor

Features

· Complementary P + N channel

· Enhancement mode

· Super Logic level (2.5V rated)

· Avalanche rated

· Qualified according to AEC Q101

· 100% lead-free; RoHS compliant

· Halogen free according to IEC61249-2-21

Maximum ratings, at T

j

=25 °C, unless otherwise specified

1)

Parameter Symbol Conditions Unit

P N

Continuous drain current

I

D

T

A

=25 °C

-1.5 1.5 A

T

A

=70 °C

-1.2 1.2

Pulsed drain current

I

D,pulse

T

A

=25 °C

-6 6

Avalanche energy, single pulse

E

AS

P: I

D

=-1.5 A,

N: I

D

=1.5 A,

R

GS

=25 W

11 3.7 mJ

Gate source voltage

V

GS

V

Power dissipation

P

tot

T

A

=25 °C

W

Operating and storage temperature

T

j

, T

stg

°C

ESD class JESD22-A114-HBM

Soldering temperature

T

solder

°C

IEC climatic category; DIN IEC 68-1

Value

-55 ... 150

55/150/56

260

±12

0.5

1)

Remark: only one of both transistors active

0 (<250V)

PG-TSOP6

Type

Package

Tape and Reel Information

Marking

Lead Free

Packing

BSL215C

PG-TSOP-6

H6327: 3000 pcs / reel

sPH

Yes

Non dry

4

5

6

1

2

3

P

N

V

DS

-20

20

V

R

DS(on),max

V

GS

=±4.5 V

150

140

mW

V

GS

=±2.5 V

280

250

I

D

-1.5

1.5

A

Product Summary

Rev.2.2 page 1 2013-11-06

BSL215C

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

P

N

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage P

V

(BR)DSS

V

GS

=0 V, I

D

=-250 µA

- - -20 V

N

V

GS

=0 V, I

D

=250 µA

20 - -

Gate threshold voltage P

V

GS(th)

V

DS

=V

GS

, I

D

=-11 µA

-1.2 -0.9 -0.6

N

V

DS

=V

GS

, I

D

=3.7 µA

0.7 0.95 1.2

Zero gate voltage drain current P

I

DSS

V

DS

=-20 V, V

GS

=0 V,

T

j

=25 °C

- - -1 µA

N

V

DS

=20 V, V

GS

=0 V,

T

j

=25 °C

- - 1

P

V

DS

=-20 V, V

GS

=0 V,

T

j

=150 °C

- - -100

N

V

DS

=20 V, V

GS

=0 V,

T

j

=150 °C

- - 100

Gate-source leakage current P

N

P

R

DS(on)

V

GS

=-2.5V, I

D

=-1.1 A

- 163 280

mW

N

V

GS

=2.5 V, I

D

=0.7 A

- 173 250

P

V

GS

=-4.5V, I

D

=-1.5 A

- 102 150

N

V

GS

=4.5 V, I

D

=1.5 A

- 108 140

Transconductance P

g

fs

|V

DS

|>2|I

D

|R

DS(on)max

,

I

D

=-1.2 A

- 4.5 - S

N

|V

DS

|>2|I

D

|R

DS(on)max

,

I

D

=1.2 A

- 4 -

±100

R

thJA

nA

I

GSS

-

V

GS

=±12 V, V

DS

=0 V

-

Values

2)

Performed on 40mm

2

FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both

sides of the PCB

Drain-source on-state

resistance

Thermal resistance, junction -

ambient

-

-

250

minimal footprint

2)

K/W

Rev.2.2 page 2 2013-11-06

BSL215C

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance P

C

iss

- 270 346 pF

N - 110 143

Output capacitance P

C

oss

- 110 128

N - 46 62

Reverse transfer capacitance P

C

rss

- 94 128

N - 6.1 9

Turn-on delay time P

t

d(on)

- 6.7 ns

N - 4.1 -

Rise time P

t

r

- 9.7 -

N - 7.6 -

Turn-off delay time P

t

d(off)

- 14.5 -

N - 6.8 -

Fall time P

t

f

- 14.0 -

N - 1.4 -

Gate Charge Characteristics

Gate to source charge P

Q

gs

- -0.49 - nC

Gate to drain charge

Q

gd

- -1.9 -

Switching charge

Q

g

- -3.0 -

Gate plateau voltage

V

plateau

- -1.9 -

Gate to source charge N

Q

gs

- 0.24 -

Gate to drain charge

Q

gd

- 0.2 -

Switching charge

Q

g

- 0.73 -

Gate plateau voltage

V

plateau

- 2.2 -

V

DD

=10 V,

I

D

=1.5 A,

V

GS

=0 to 4.5 V

Values

V

GS

=0 V,

P: V

DS

=-10 V,

N: V

DS

= 10 V,

f=1 MHz

P: V

DD

=-10 V,

V

GS

=-4.5V, R

G

=6 W,

I

D

=-1.5 A

N: V

DD

=10 V,

V

GS

=4.5 V, R

G

=6 W,

I

D

=1.5 A

V

DD

=-10 V,

I

D

=-1.5 A,

V

GS

=0 to -5 V

Rev.2.2 page 3 2013-11-06

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

BSL215CL6327HTSA1

Mfr. #:

Buy BSL215CL6327HTSA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N/P-CH 20V 1.5A TSOP-6

Lifecycle:

New from this manufacturer.

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BSL215CL6327HTSA1