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BSL215CL6327HTSA1

P1-P3P4-P6P7-P9P10-P12P13-P13
BSL215C
21 Forward characteristics of reverse diode (P) 22 Forward characteristics of reverse diode (N)
I
F
=f(V
SD
) I
F
=f(V
SD
)
parameter: T
j
parameter: T
j
23 Avalanche characteristics (P) 24 Avalanche characteristics (N)
I
AS
=f(t
AV
); R
GS
=25 W I
AS
=f(t
AV
); R
GS
=25 W
parameter: T
j(start)
parameter: T
j(start)
25 °C
100 °C
125 °C
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
-I
AV
[A]
t
AV
[µs]
25 °C
100 °C
125 °C
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
I
AV
[A]
t
AV
[µs]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10
-2
10
-1
10
0
10
1
0 0.5 1 1.5 2
-I
F
[A]
-V
SD
[V]
25 °C
150 °C
98%, 25 °C
98%, 150°C
10
-2
10
-1
10
0
10
1
0 0.4 0.8 1.2 1.6
I
F
[A]
V
SD
[V]
Rev.2.2 page 10 2013-11-06
BSL215C
25 Typ. gate charge (P) 26 Typ. gate charge (N)
V
GS
=f(Q
gate
); I
D
=-1.5 A pulsed V
GS
=f(Q
gate
); I
D
=1.5 A pulsed
parameter: V
DD
parameter: V
DD
27 Drain-source breakdown voltage (P) 28 Drain-source breakdown voltage (N)
V
BR(DSS)
=f(T
j
); I
D
=-250 µA V
BR(DSS)
=f(T
j
); I
D
=250 µA
16
17
18
19
20
21
22
23
24
25
-60 -20 20 60 100 140 180
-V
BR(DSS)
[V]
T
j
[°C]
16
17
18
19
20
21
22
23
24
25
-60 -20 20 60 100 140 180
V
BR(DSS)
[V]
T
j
[°C]
-4 V
-10 V
-16 V
0
1
2
3
4
5
6
0 1 2 3 4 5
-V
GS
[V]
-Q
gate
[nC]
4 V
10 V
16 V
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1
V
GS
[V]
Q
gate
[nC]
Rev.2.2 page 11 2013-11-06
BSL215C
BSL215C
Package Outline:
Footprint: Packaging:
Dimensions in mm
TSOP6
Rev.2.2 page 12 2013-11-06
P1-P3P4-P6P7-P9P10-P12P13-P13

BSL215CL6327HTSA1

Mfr. #:
Buy BSL215CL6327HTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N/P-CH 20V 1.5A TSOP-6
Lifecycle:
New from this manufacturer.
Delivery:
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