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LT1101ISW#TRPBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
4
LT1101
1101fa
ELECTRICAL CHARACTERISTICS
LT1101AM/AI LT1101M/I
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
V
O
Maximum 0utput R
L
= 50k 13.0 14.2 13.0 14.2 V
Voltage Swing R
L
= 2k 11.0 13.2 11.0 13.2 V
BW Bandwidth G = 100 (Note 2) 2.3 3.5 2.3 3.5 kHz
G = 10 (Note 2) 25 37 25 37 kHz
SR Slew Rate 0.06 0.10 0.06 0.10 V/µs
V
S
= ±15V, V
CM
= 0V, T
A
= 25°C, Gain = 10 or 100, unless otherwise noted.
LT1101AM/AI LT1101M/I
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
G
E
Gain Error G = 100, V
O
= ±10V, R
L
= 50k 0.024 0.070 0.026 0.100 %
G = 100, V
O
= ±10V, R
L
= 5k 0.030 0.100 0.035 0.130 %
G = 10, V
O
= ±10V, R
L
= 50k or 5k 0.015 0.070 0.018 0.100 %
TCG
E
Gain Error Drift G = 100, R
L
= 50k 2 4 2 5 ppm/°C
(Note 2) G = 100, R
L
= 5k 2 7 2 8 ppm/°C
G = 10, R
L
= 50k or 5k 1 4 1 5 ppm/°C
G
NL
Gain Nonlinearity G = 100, R
L
= 50k 24 70 26 90 ppm
G = 100, R
L
= 5k 70 300 75 500 ppm
G = 10, R
L
= 50k 4 13 5 15 ppm
G = 10, R
L
= 5k 10 40 12 60 ppm
V
OS
Input Offset Voltage 90 350 110 500 µV
LT1101ISW 110 950 µV
∆V
OS
/∆T Input Offset Voltage Drift (Note 2) 0.4 2.0 0.5 2.8 µV/°C
LT1101ISW 0.5 4.8 mV/°C
l
OS
Input Offset Current 0.16 0.80 0.19 1.30 nA
∆l
OS
/∆T Input Offset Current Drift (Note 2) 0.5 4.0 0.8 7.0 pA/°C
I
B
Input Bias Current 7 10 7 12 nA
∆I
B
/∆T Input Bias Current Drift (Note 2) 10 25 10 30 pA/°C
CMRR Common Mode G = 100, V
CM
= –14.4V to 13V 96 111 94 111 dB
Rejection Ratio G = 100, V
CM
= –13V to 11.5V 80 99 78 98 dB
PSRR Power Supply V
S
= 3.0, –0.1V to ±18V 98 110 94 110 dB
Rejection Ratio
I
S
Supply Current 105 165 108 190 µA
V
O
Maximum 0utput R
L
= 50k 12.5 14.0 12.5 14.0 V
Voltage Swing R
L
= 5k 11.0 13.5 11.0 13.5 V
ELECTRICAL CHARACTERISTICS
V
S
= ±15V, V
CM
= 0V, Gain = 10 or 100, –55°C ≤ T
A
≤ 125°C for AM/M
grades, –40°C ≤ T
A
≤ 85°C for AI/I grades, unless otherwise noted.
5
LT1101
1101fa
ELECTRICAL CHARACTERISTICS
V
S
= ±15V, V
CM
= 0V, Gain = 10 or 100, 0°C ≤ T
A
≤ 70°C, unless
otherwise noted.
LT1101AC LT1101C/S
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
G
E
Gain Error G = 100, V
O
= ±10V, R
L
= 50k 0.012 0.055 0.014 0.080 %
G = 100, V
O
= ±10V, R
L
= 2k 0.018 0.085 0.020 0.100 %
G = 10, V
O
= ±10V, R
L
= 50k or 2k 0.009 0.055 0.010 0.080 %
TCG
E
Gain Error Drift G = 100, R
L
= 50k 1 4 1 5 ppm/°C
(Note 2) G = 100, R
L
= 2k 2 7 2 9 ppm/°C
G = 10, R
L
= 50k or 5k 1 4 1 5 ppm/°C
G
NL
Gain Nonlinearity G = 100, R
L
= 50k 9 25 10 35 ppm
G = 100, R
L
= 2k 33 75 36 100 ppm
G = 10, R
L
= 50k or 2k 4 10 4 11 ppm
V
OS
Input Offset Voltage 70 250 85 350 µV
LT1101SW 300 800 µV
∆V
OS
/∆T Input Offset Voltage Drift (Note 2) 0.4 2.0 0.5 2.8 µV/°C
LT1101SW 1.2 4.5 µV/°C
l
OS
Input Offset Current 0.14 0.70 0.17 1.10 nA
∆I
OS
/∆T Input Offset Current Drift (Note 2) 0.5 4.0 0.8 7.0 pA/°C
I
B
Input Bias Current 6 9 6 11 nA
∆I
B
/∆T Input Bias Current Drift (Note 2) 10 25 10 30 pA/°C
CMRR Common Mode G = 100, V
CM
= –14.4V to 13V 98 112 96 112 dB
Rejection Ratio G = 100, V
CM
= –13V to 11.5V 82 100 80 99 dB
PSRR Power Supply V
S
= 2.5, –0.1V to ±18V 100 112 97 112 dB
Rejection Ratio
I
S
Supply Current 98 148 100 170 µA
V
O
Maximum 0utput R
L
= 50k ±12.5 ±14.1 ±12.5 ±14.1 V
Voltage Swing R
L
= 2k ±10.5 ±13.0 ±10.5 ±13.0 V
6
LT1101
1101fa
LT1101AM/AI LT1101M/I
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
G
E
Gain Error G = 100, V
0
= 0.1V to 3.5V, R
L
= 50k 0.026 0.080 0.028 0.120 %
G = 10, V
CM
= 0.15, R
L
= 50k 0.011 0.070 0.014 0.100 %
TCG
E
Gain Error Drift R
L
= 50k (Note 2) 1 4 1 5 ppm/°C
G
NL
Gain Nonlinearity G = 100, R
L
= 50k 45 110 48 140 ppm
G = 10, R
L
= 50k (Note 2) 4 13 5 15 ppm
V
OS
Input Offset Voltage 90 350 110 500 µV
LT1101ISW 110 950 µV
∆V
OS
/∆T Input Offset Voltage Drift (Note 2) 0.4 2.0 0.5 2.8 µV/°C
LT1101ISW 0.5 4.8 µV/°C
l
OS
Input Offset Current 0.16 0.80 0.19 1.30 nA
∆V
OS
/∆T Input Offset Current Drift (Note 2) 0.5 4.0 0.8 7.0 pA/°C
I
B
Input Bias Current 7 10 7 12 nA
∆I
B
/∆T Input Bias Current Drift (Note 2) 10 25 10 30 pA/°C
CMRR Common Mode G = 100, V
CM
= 0.1V to 3.2V 91 105 88 104 dB
Rejection Ratio G = 10, V
CM
= 0.1V to 2.9V, V
REF
= 0.15V 80 98 77 97 dB
I
S
Supply Current 88 135 92 160 µA
V
0
Maximum 0utput Output High, 50k to GND 3.8 4.1 3.8 4.1 V
Voltage Swing Output High, 2k to GND 3.0 3.7 3.0 3.7 V
Output Low, V
REF
= 0, No Load 4.5 8 4.5 8 mV
Output Low, V
REF
= 0, 2k to GND 0.7 1.5 0.7 1.5 mV
Output Low, V
REF
= 0, I
SINK
= 100µA 125 170 125 170 mV
V
S
= 5V, 0V, V
CM
= 0.1V, V
REF(PIN 1)
= 0.1V, Gain = 10 or 100,
–40°C ≤ T
A
≤ 85°C for AI/I grades, unless otherwise noted (Note 4).
ELECTRICAL CHARACTERISTICS
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

LT1101ISW#TRPBF

Mfr. #:
Buy LT1101ISW#TRPBF
Manufacturer:
Analog Devices Inc.
Description:
Instrumentation Amplifiers Prec, uP, 1x S Instr Amp (Fixed Gain = 1
Lifecycle:
New from this manufacturer.
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