7
LT1101
1101fa
LT1101AC LT1101C/S
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
G
E
Gain Error G = 100, V
O
= 0.1V to 3.5V, R
L
= 50k 0.017 0.065 0.018 0.095 %
G = 10, V
CM
= 0.15V, R
L
= 50k 0.010 0.060 0.012 0.080 %
TCG
E
Gain Error Drift R
L
= 50k (Note 2) 1 4 1 5 ppm/°C
G
NL
Gain Nonlinearity G = 100, R
L
= 50k 25 80 25 100 ppm
G = 10, R
L
= 50k (Note 2) 4 10 4 11 ppm
V
OS
Input Offset Voltage 70 250 85 350 µV
LT1101SW 300 800 µV
∆V
OS
/∆T Input Offset Voltage Drift (Note 2) 0.4 2.0 0.5 2.8 µV/°C
LT1101SW 1.2 4.5 µV/°C
l
OS
Input Offset Current 0.14 0.70 0.17 1.10 nA
∆I
OS
/∆T Input Offset Current Drift (Note 2) 0.5 4.0 0.8 7 pA/°C
I
B
Input Bias Current 6 9 6 11 nA
∆I
B
/∆T Input Bias Current Drift (Note 2) 10 25 10 30 pA/°C
CMRR Common Mode G = 100, V
CM
= 0.07V to 3.3V 93 105 90 104 dB
Rejection Ratio G = 10, V
CM
= 0.07V to 3V, V
REF
= 0.15V 82 99 80 98 dB
I
S
Supply Current 80 120 85 145 µA
V
O
Maximum 0utput Output High, 50k to GND 4.0 4.2 4.0 4.2 V
Voltage Swing Output High, 2k to GND 3.3 3.8 3.3 3.8 V
Output Low, V
REF
= 0, No Load 4 7 4 7 mV
Output Low, V
REF
= 0, 2k to GND 0.6 1.2 0.6 1.2 mV
Output Low, V
REF
= 0, I
SINK
= 100µA 100 150 100 150 mV
V
S
= 5V, 0V, V
CM
= 0.1V, V
REF(PIN 1)
= 0.1V, Gain = 10 or 100,
0°C ≤ T
A
≤ 70°C, unless otherwise noted (Note 4).
ELECTRICAL CHARACTERISTICS
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: This parameter is not tested. It is guaranteed by design and by
inference from other tests.
Note 3: This parameter is tested on a sample basis only.
Note 4: These test conditions are equivalent to V
S
= 4.9V, – 0.1V,
V
CM
= 0V, V
REF(PIN1)
= 0V.
Note 5: Minimum supply voltage is guaranteed by the power supply
rejection test. The LT1101 actually works at 1.8V supply with minimal
degradation in performance.
