FDU3580

August 2001
2001 Fairchild Semiconductor Corporation
FDD3580/FDU3580 Rev A1(W)
FDD3580/FDU3580
80V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
This MOSFET features faster switching and lower gate
change than other MOSFETs with comparable R
DS(ON)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Features
7.7 A, 80 V. R
DS(ON)
= 29 m @ V
GS
= 10 V
R
DS(ON)
= 33 m @ V
GS
= 6 V
Low gate charge (34nC typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S
D
G
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 80 V
V
GSS
Gate-Source Voltage
± 20
V
Maximum Drain Current-Continuous (Note 1a) 7.7I
D
Maximum Drain Current – Pulsed 50
A
Maximum Power Dissipation @T
C
= 25
o
C (Note 1) 42
T
A
= 25
o
C (Note 1a) 3.8
P
D
T
A
= 25
o
C (Note 1b) 1.6
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +175 °C
Thermal Characteristics
R
θJC
Thermal Resistance, Junction-to- Case (Note 1) 3.5
°C/W
R
θJA
Thermal Resistance, Junction-to- Ambient (Note 1b) 96
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD3580 FDD3580 13’’ 16mm 2500
FDU3580 FDU3580 Tube N/A 75
FDD3580
/
FDU3580
G DS
I-PAK
(TO-251AA)
G
S
D
TO-252
D-PAK
(TO-
G
S
D
TO-252
D-PAK
(TO-252)
FDD3580/FDU3580 Rev. A1(W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
V
DD
= 40 V, I
D
= 7.7 A 245 mJ
I
AR
Maximum Drain-Source
Avalanche Current
7.7 A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
80 V
BVDSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
79
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 64 V, V
GS
= 0 V 1
µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –20 V, V
DS
= 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,I
D
= 250 µA
22.54 V
VGS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C 7mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V, I
D
= 7.7 A
V
GS
= 6 V, I
D
= 7.2 A
V
GS
= 10 V, I
D
= 7.7 A,T
J
=125°C
23
24
37
29
33
50
m
I
D(on)
On–State Drain Current V
GS
= 10 V, V
DS
= 10 V 30 A
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 7.7 A 28 S
Dynamic Characteristics
C
iss
Input Capacitance 1760 pF
C
oss
Output Capacitance 144 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 40 V, V
GS
= 0 V,
f = 1.0 MHz
72 pF
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 13 23 ns
t
r
Turn–On Rise Time 8 16 ns
t
d(off)
Turn–Off Delay Time 34 54 ns
t
f
Turn–Off Fall Time
V
DD
= 40 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
16 29 ns
Q
g
Total Gate Charge 35 49 nC
Q
gs
Gate–Source Charge 6.2 nC
Q
gd
Gate–Drain Charge
V
DS
= 40V, I
D
= 7.7 A,
V
GS
= 10 V,
8.6 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 3.2 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 3.2 A (Note 2) 0.73 1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
= 40 °C/W when mounted on a
1in
2
pad of 2 oz copper.
Scale 1 : 1 on letter size paper
b) R
θJA
= 96 °C/W when mounted
on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDD3580
/
FDU3580
FDD3580/FDU3580 Rev. A1(W)
Typical Characteristics
0
10
20
30
40
50
60
012345
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
6.0V
4.0V
V
GS
= 10V
5.0V
4.5V
0.8
1
1.2
1.4
1.6
1.8
2
0 102030405060
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 4.0V
5.0V
4.5V
10V
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
-50 -25 0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANC
E
I
D
= 7.7A
V
GS
= 10V
0.01
0.02
0.03
0.04
0.05
0.06
246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
=3.8A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
23456
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
-55
o
C
V
DS
= 5V
25
o
C
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD3580
/
FDU3580

FDU3580

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 80V N-Ch PowerTrench
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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