FDD3580

Mfr. #:: FDD3580
Manufacturer:: ON Semiconductor
Description:: MOSFET N-CH 80V 7.7A D-PAK
Lifecycle:: New from this manufacturer.
Datasheet:: FDD3580 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: FDD3580 Datasheet FDD3580 Datasheet (P4-P5)
ECAD Model:

Product Attribute
Attribute Value

Tags: FDD35, FDD3, FDD

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDD3580 Description

***Yang: N-Channel 80V 7.7A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount D-PAK (TO-252AA) - Bulk

***i-Key: MOSFET N-CH 80V 7.7A D-PAK

***ser: MOSFETs 80V N-Ch PowerTrench

***el Nordic: Contact for details

***et: N-Channel 80V 10A (Ta) 3.4W (Ta), 69W (Tc) Surface Mount TO-252

***i-Key: MOSFET N-CH 80V 10A D-PAK

***ser: MOSFETs 80V N-Ch PowerTrench

***el Nordic: Contact for details

***p One Stop Global: Trans MOSFET P-CH 100V 9A Automotive 3-Pin(2+Tab) TO-252 T/R

***ure Electronics: Single P-Channel 100 V 300 mOhm 8.4 nC 42 W Silicon SMT Mosfet - TO-252-3

***ment14 APAC: MOSFET, P-CH, -100V, -9A, TO252; Transistor Polarity:P Channel; Continuous Drain Current Id:-9A; Source Voltage Vds:-100V; On Resistance

***nell: MOSFET, P-CH, -100V, -9A, TO252; Transistor Polarity: P Channel; Continuous Drain Current Id: -9A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.19ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 42W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ark: TO-252AA, SINGLE, N-CH, 100V, 36MOHM ULTRAFET TRENCH MOSFET / TAPE REEL

***p One Stop: Trans MOSFET N-CH 100V 5.5A Automotive 3-Pin(2+Tab) TO-252AA T/R

***emi: PowerTrench® MOSFET, N-Channel, 100V, 32A, 36mΩ

***ure Electronics: Single N-Channel 100 V 160 W 28 nC PowerTrench Surface Mount Mosfet - TO-263-3

***r Electronics: Power Field-Effect Transistor, 5.5A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***el Electronic: Terminal Blocks - Accessories - Wire Ferrules Non-Insulated 4 Weeks Single Wire 18 AWG 1.00mm2 Not Applicable 6.00mm 6mm Terminals 18AWG NON-INSL

***o-Tech: Single N-Channel 100 V 48 W 25 nC Hexfet Power Mosfet Surface Mount - TO-252AA

***essParts.Net: INTERNATIONAL RECTIFIER IRFR120NTRPBF / MOSFET N-CH 100V 9.4A DPAK ESD IR

***(Formerly Allied Electronics): MOSFET, 100V, 9.1A, 210 mOhm, 16.7 nC Qg, D-Pak

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ment14 APAC: MOSFET, N-CH, 100V, 9.4A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Source Voltage Vds:100V; On Resistance

***roFlash: Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N-CH, 100V, 9.4A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.21ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 48W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***(Formerly Allied Electronics): MOSFET; N Ch.; Automotive; 100V; 8.7A; 190 MOHM; 6.9 NC QG; D-PAK; Pb-Free

***ure Electronics: Single N-Channel 100 V 190 mOhm 6.9 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***roFlash: Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Lighting LED

***nell: MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.19ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 35W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 8.7A; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V

Market price

Part #	Mfg.	Description	Stock	Price
FDD3580 DISTI # FDD3580-ND	ON Semiconductor	MOSFET N-CH 80V 7.7A D-PAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
FDD3580 DISTI # 512-FDD3580	ON Semiconductor	MOSFET 80V N-Ch PowerTrench RoHS: Compliant	0
FDD3580	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 7.7A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	8500	1000:$0.8700 500:$0.9100 100:$0.9500 25:$0.9900 1:$1.0700
FDD3580	Fairchild Semiconductor Corporation	7.7 A, 80 V, 0.029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252	76	72:$0.4900 15:$0.7000 1:$1.4000

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	Mfr.#: FDD10AN06A0-NL OMO.#: OMO-FDD10AN06A0-NL-1190	New and Original
	Mfr.#: FDD16AN08A0 F054 OMO.#: OMO-FDD16AN08A0-F054-1190	New and Original
	Mfr.#: FDD4141-FSC OMO.#: OMO-FDD4141-FSC-1190	New and Original
	Mfr.#: FDD4685-F085P OMO.#: OMO-FDD4685-F085P-ON-SEMICONDUCTOR	PMOS DPAK 40V 27 MOHM
	Mfr.#: FDD6644F054 OMO.#: OMO-FDD6644F054-1190	New and Original
	Mfr.#: FDD8647L-CUT TAPE OMO.#: OMO-FDD8647L-CUT-TAPE-1190	New and Original

FDD3580

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes