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FDD044AN03L

FDD044AN03L
Mfr. #:
FDD044AN03L
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 30V N-Channel PowerTrench
Lifecycle:
New from this manufacturer.
Datasheet:
FDD044AN03L Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDD044AN03L DatasheetFDD044AN03L Datasheet (P4-P6)FDD044AN03L Datasheet (P7-P9)FDD044AN03L Datasheet (P10-P11)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
35 A
Rds On - Drain-Source Resistance:
3.9 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
160 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
2.39 mm
Length:
6.73 mm
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
6.22 mm
Brand:
ON Semiconductor / Fairchild
Fall Time:
63 ns
Product Type:
MOSFET
Rise Time:
154 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
42 ns
Typical Turn-On Delay Time:
20 ns
Unit Weight:
0.139332 oz
Tags
FDD0, FDD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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MOSFET N-CH 30V 21A/35A TO252AA
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***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:35A; On Resistance, Rds(on):3.9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252AA ;RoHS Compliant: Yes
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Power Field-Effect Transistor, 113A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
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Trans MOSFET N-CH 30V 24.3A 8-Pin PowerPAK SO EP T/R
***ure Electronics
N-CH POWERPAK SO-8 BWL 20V 4.7MOHM@10V- LEAD(PB) AND HALOGEN FREE
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET,N CH,30V,40A,POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:24.3A; Power Dissipation Pd:5W; Voltage Vgs Max:20V
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 4.0mΩ
***ment14 APAC
N CHANNEL MOSFET, 25V, 35A TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Source Voltage Vds:25V; On Resistance
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.
***(Formerly Allied Electronics)
IRLR7807ZTRPBF N-channel MOSFET Transistor; 43 A; 30 V; 3+Tab-Pin DPAK
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Single N-Channel 30V 13.8 mOhm 7 nC HEXFET® Power Mosfet - TO-252AA
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30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
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***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***nell
MOSFET, N-CH, 30V, 43A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 43A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Po
***roFlash
Trans MOSFET N-CH 30V 13.1A Automotive 3-Pin(2+Tab) DPAK T/R
***ark
Mosfet, N-Ch, 30V, 43A, To-252 Rohs Compliant: Yes
***ure Electronics
N-Channel 30V 13.1A (Ta), 43A (Tc) 1.6W (Ta) Surface Mount TO-252-3
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Part # Mfg. Description Stock Price
FDD044AN03L
DISTI # FDD044AN03L-ND		ON SemiconductorMOSFET N-CH 30V 35A D-PAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDD044AN03L
    DISTI # 512-FDD044AN03L    		ON SemiconductorMOSFET 30V N-Channel PowerTrench
    RoHS: Compliant    		0
      FDD044AN03LFairchild Semiconductor CorporationPower Field-Effect Transistor, 21A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      RoHS: Compliant      		4060
      • 1000:$0.9000
      • 500:$0.9400
      • 100:$0.9800
      • 25:$1.0200
      • 1:$1.1000
      Image Part # Description
      FDD044AN03L

      Mfr.#: FDD044AN03L

      OMO.#: OMO-FDD044AN03L

      		 MOSFET 30V N-Channel PowerTrench
      FDD044AN03L

      Mfr.#: FDD044AN03L

      OMO.#: OMO-FDD044AN03L-ON-SEMICONDUCTOR

      		 MOSFET N-CH 30V 35A D-PAK
      Availability
      Stock:
      Available
      On Order:
      1000
      Enter Quantity:
      Current price of FDD044AN03L is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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