FDD35

FDD3510H vs FDD3570 vs FDD3580

 
PartNumberFDD3510HFDD3570FDD3580
DescriptionMOSFET 80V Dual N & P-Chan PowerTrenchMOSFET 80V N-Ch PowerTrenchMOSFET N-CH 80V 7.7A D-PAK
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-5TO-252-3-
Number of Channels2 Channel1 Channel-
Transistor PolarityN-Channel, P-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V80 V-
Id Continuous Drain Current4.3 A43 A-
Rds On Drain Source Resistance80 mOhms15 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation3.1 W3.4 W-
ConfigurationDualSingle-
Channel ModeEnhancementEnhancement-
TradenamePowerTrench--
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesFDD3510H--
Transistor Type1 N-Channel, 1 P-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time2 ns, 5 ns24 ns-
Product TypeMOSFETMOSFET-
Rise Time2 ns, 3 ns12 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time16 ns, 25 ns60 ns-
Typical Turn On Delay Time7 ns, 6 ns20 ns-
Unit Weight0.009184 oz0.011640 oz-
Type-MOSFET-
Forward Transconductance Min-40 S-
Part # Aliases-FDD3570_NL-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDD3510H MOSFET 80V Dual N & P-Chan PowerTrench
FDD3570 MOSFET 80V N-Ch PowerTrench
ON Semiconductor
ON Semiconductor
FDD3510H MOSFET N/P-CH 80V 4.3A/2.8A DPAK
FDD3570 MOSFET N-CH 80V 10A D-PAK
FDD3580 MOSFET N-CH 80V 7.7A D-PAK
FDD3570-NL New and Original
FDD3570FSC New and Original
FDD3580-NL New and Original
Top