PartNumber | FDD306P | FDD3510H | FDD3570 |
Description | MOSFET SPECIFIED POWER TR 1.8V PCH | MOSFET 80V Dual N & P-Chan PowerTrench | MOSFET 80V N-Ch PowerTrench |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-5 | TO-252-3 |
Number of Channels | 1 Channel | 2 Channel | 1 Channel |
Transistor Polarity | P-Channel | N-Channel, P-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 12 V | 80 V | 80 V |
Id Continuous Drain Current | 6.7 A | 4.3 A | 43 A |
Rds On Drain Source Resistance | 28 mOhms | 80 mOhms | 15 mOhms |
Vgs Gate Source Voltage | 8 V | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 52 W | 3.1 W | 3.4 W |
Configuration | Single | Dual | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | PowerTrench | PowerTrench | - |
Packaging | Reel | Reel | Reel |
Height | 2.39 mm | 2.39 mm | 2.39 mm |
Length | 6.73 mm | 6.73 mm | 6.73 mm |
Series | FDD306P | FDD3510H | - |
Transistor Type | 1 P-Channel | 1 N-Channel, 1 P-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Fall Time | 41 ns | 2 ns, 5 ns | 24 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8 ns | 2 ns, 3 ns | 12 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 34 ns | 16 ns, 25 ns | 60 ns |
Typical Turn On Delay Time | 16 ns | 7 ns, 6 ns | 20 ns |
Part # Aliases | FDD306P_NL | - | FDD3570_NL |
Unit Weight | 0.009184 oz | 0.009184 oz | 0.011640 oz |
Type | - | - | MOSFET |
Forward Transconductance Min | - | - | 40 S |