IRG4BC30KDPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) 67 100 I
C
= 16A
Q
ge
Gate - Emitter Charge (turn-on) 11 16 nC V
CC
= 400V See Fig.8
Q
gc
Gate - Collector Charge (turn-on) 25 37 V
GE
= 15V
t
d(on)
Turn-On Delay Time 60
t
r
Rise Time 42 T
J
= 25°C
t
d(off)
Turn-Off Delay Time 160 250 I
C
= 16A, V
CC
= 480V
t
f
Fall Time 80 120 V
GE
= 15V, R
G
= 23Ω
E
on
Turn-On Switching Loss 0.60 Energy losses include "tail"
E
off
Turn-Off Switching Loss 0.58 mJ and diode reverse recovery
E
ts
Total Switching Loss 1.18 1.6 See Fig. 9,10,14
t
sc
Short Circuit Withstand Time 10 µs V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 10Ω , V
CPK
< 500V
t
d(on)
Turn-On Delay Time 58 T
J
= 150°C, See Fig. 11,14
t
r
Rise Time 42 I
C
= 16A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time 210 V
GE
= 15V, R
G
= 23Ω
t
f
Fall Time 160 Energy losses include "tail"
E
ts
Total Switching Loss 1.69 mJ and diode reverse recovery
L
E
Internal Emitter Inductance 7.5 nH Measured 5mm from package
C
ies
Input Capacitance 920 V
GE
= 0V
C
oes
Output Capacitance 110 pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance 27 = 1.0MHz
t
rr
Diode Reverse Recovery Time 42 60 ns T
J
= 25°C See Fig.
80 120 T
J
= 125°C 14 I
F
= 12A
I
rr
Diode Peak Reverse Recovery Current 3.5 6.0 A T
J
= 25°C See Fig.
5.6 10 T
J
= 125°C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge 80 180 nC T
J
= 25°C See Fig.
220 600 T
J
= 125°C 16 di/dt = 200Aµs
di
(rec)M
/dt Diode Peak Rate of Fall of Recovery 180 A/µs T
J
= 25°C See Fig.
During t
b
160 T
J
= 125°C 17
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 V V
GE
= 0V, I
C
= 250µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage 0.54 V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage 2.21 2.7 I
C
= 16A V
GE
= 15V
2.88 V I
C
= 28A See Fig. 2, 5
2.36 I
C
= 16A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage -12 mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance 5.4 8.1 S V
CE
= 100V, I
C
= 16A
I
CES
Zero Gate Voltage Collector Current 250 µA V
GE
= 0V, V
CE
= 600V
2500 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop 1.4 1.7 V I
C
= 12A See Fig. 13
1.3 1.6 I
C
= 12A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
