IRG4BC30KDPBF

IRG4BC30KDPBF
Mfr. #:
IRG4BC30KDPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V UltraFast 8-25kHz
Lifecycle:
New from this manufacturer.
Datasheet:
IRG4BC30KDPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4BC30KDPBF DatasheetIRG4BC30KDPBF Datasheet (P4-P6)IRG4BC30KDPBF Datasheet (P7-P9)IRG4BC30KDPBF Datasheet (P10)
ECAD Model:
More Information:
IRG4BC30KDPBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-220-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Collector-Emitter Saturation Voltage:
2.21 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
28 A
Pd - Power Dissipation:
100 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tube
Continuous Collector Current Ic Max:
28 A
Height:
8.77 mm
Length:
10.54 mm
Width:
4.69 mm
Brand:
Infineon Technologies
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
1000
Subcategory:
IGBTs
Part # Aliases:
SP001532644
Unit Weight:
0.211644 oz
Tags
IRG4BC30KDP, IRG4BC30KD, IRG4BC30K, IRG4BC3, IRG4BC, IRG4B, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(3+Tab) TO-220AB Tube
***essParts.Net
INTERNATIONAL RECTIFIER IRG4BC30KDPBF / IGBT W/DIODE 600V 28A TO220AB
***ied Electronics & Automation
IRG4BC30KDPBF, IGBT Transistor, 28 A 600 V, 3-Pin TO-220AB
***ure Electronics
IRG4BC30 Series 600 V 16 A N-Channel Ultra Fast IGBT - TO-220AB
***ernational Rectifier
600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.7 V Current release time: 160 ns Power dissipation: 100 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:28A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 28A, TO-220; Transistor Type:IGBT; DC Collector Current:28A; Collector Emitter Voltage Vces:2.21V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:28A; Current Temperature:25°C; Fall Time Max:120ns; Fall Time tf:120ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:58A; Rise Time:42ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
Part # Mfg. Description Stock Price
IRG4BC30KDPBF
DISTI # V36:1790_13892392
Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB Tube1456
  • 2000:$1.6040
  • 1000:$1.6980
  • 500:$1.8870
  • 250:$2.0960
  • 100:$2.3290
  • 10:$2.6320
  • 1:$3.3209
IRG4BC30KDPBF
DISTI # V99:2348_13892392
Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB Tube349
  • 1000:$1.7290
  • 500:$1.8870
  • 250:$2.0960
  • 100:$2.3290
  • 10:$2.6320
  • 1:$3.3209
IRG4BC30KDPBF
DISTI # IRG4BC30KDPBF-ND
Infineon Technologies AGIGBT 600V 28A 100W TO220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
  • 1000:$1.9522
IRG4BC30KDPBF
DISTI # 30701753
Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB Tube2667
  • 7:$1.4776
IRG4BC30KDPBF
DISTI # 26194547
Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB Tube1456
  • 2000:$1.7243
  • 1000:$1.8254
  • 500:$2.0285
  • 250:$2.2543
  • 100:$2.5048
  • 10:$2.8294
  • 4:$3.2465
IRG4BC30KDPBF
DISTI # 26198378
Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB Tube349
  • 1000:$1.8587
  • 500:$2.0285
  • 250:$2.2543
  • 100:$2.5048
  • 10:$2.8294
  • 4:$3.2465
IRG4BC30KDPBF
DISTI # SP001532644
Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB (Alt: SP001532644)
RoHS: Compliant
Min Qty: 1
Europe - 1450
  • 1000:€1.2900
  • 500:€1.3900
  • 50:€1.4900
  • 100:€1.4900
  • 25:€1.5900
  • 10:€1.6900
  • 1:€1.7900
IRG4BC30KDPBF
DISTI # IRG4BC30KDPBF
Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRG4BC30KDPBF)
RoHS: Compliant
Min Qty: 220
Container: Bulk
Americas - 0
  • 1100:$1.3900
  • 2200:$1.3900
  • 440:$1.4900
  • 660:$1.4900
  • 220:$1.5900
IRG4BC30KDPBF
DISTI # IRG4BC30KDPBF
Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRG4BC30KDPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 2000:$1.6900
  • 4000:$1.6900
  • 1000:$1.7900
IRG4BC30KDPBF
DISTI # 63J7487
Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7487)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
    IRG4BC30KDPBF
    DISTI # 63J7487
    Infineon Technologies AGSINGLE IGBT, 600V, 28A,DC Collector Current:28A,Collector Emitter Saturation Voltage Vce(on):2.88V,Power Dissipation Pd:100W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes10
    • 1:$0.3910
    • 10:$0.3910
    • 25:$0.3910
    • 50:$0.3910
    • 100:$0.3910
    • 250:$0.3910
    • 500:$0.3910
    IRG4BC30KDPBF
    DISTI # 70017507
    Infineon Technologies AG600V ULTRAFAST 8-25 KHZ COPACK IGBT IN A TO-220AB PACKAGE
    RoHS: Compliant
    92
    • 1:$4.9300
    • 10:$4.3500
    • 100:$3.7900
    • 500:$3.2900
    • 1000:$2.9000
    IRG4BC30KDPBF
    DISTI # 942-IRG4BC30KDPBF
    Infineon Technologies AGIGBT Transistors 600V UltraFast 8-25kHz
    RoHS: Compliant
    439
    • 1:$3.5100
    • 10:$2.9800
    • 100:$2.5900
    • 250:$2.4500
    • 500:$2.2000
    • 1000:$1.8600
    • 2000:$1.7600
    IRG4BC30KDPBFInternational RectifierInsulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant
    2175
    • 1000:$1.5000
    • 500:$1.5800
    • 100:$1.6400
    • 25:$1.7100
    • 1:$1.8500
    IRG4BC30KDPBF
    DISTI # 5430153P
    Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 28A TO220AB, TU651
    • 500:£1.5500
    • 250:£1.7300
    • 100:£1.8100
    • 25:£1.8500
    IRG4BC30KDPBF
    DISTI # 5430153
    Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 28A TO220AB, EA209
    • 500:£1.5500
    • 250:£1.7300
    • 100:£1.8100
    • 25:£1.8500
    • 1:£3.1100
    IRG4BC30KDPBF
    DISTI # IRG4BC30KDPBF
    Infineon Technologies AGTransistor: IGBT,600V,28A,100W,TO220AB71
    • 1:$2.6600
    • 3:$2.3600
    • 10:$2.1200
    • 50:$1.9700
    IRG4BC30KDPBF
    DISTI # 8650390
    Infineon Technologies AGIGBT, 600V, 28A, TO-220
    RoHS: Compliant
    684
    • 500:$3.3900
    • 250:$3.7700
    • 100:$3.9800
    • 10:$4.5800
    • 1:$5.4000
    IRG4BC30KDPBF
    DISTI # 8650390
    Infineon Technologies AGIGBT, 600V, 28A, TO-220675
    • 500:£1.7400
    • 250:£1.9500
    • 100:£2.0500
    • 10:£2.3700
    • 1:£3.1300
    IRG4BC30KDPBF
    DISTI # XSKDRABV0021546
    Infineon Technologies AGPower Field-Effect Transistor,120AI(D),75V,0.0041ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-263AB
    RoHS: Compliant
    1000 in Stock0 on Order
    • 1000:$2.6400
    • 300:$2.8320
    IRG4BC30KDPBF
    DISTI # IRG4BC30KDPBF
    Infineon Technologies AG600V 28A 100W TO220AB
    RoHS: Compliant
    250
    • 10:€1.7800
    • 50:€1.4800
    • 100:€1.3800
    • 200:€1.3300
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    Availability
    Stock:
    421
    On Order:
    2404
    Enter Quantity:
    Current price of IRG4BC30KDPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $3.51
    $3.51
    10
    $2.98
    $29.80
    100
    $2.59
    $259.00
    250
    $2.45
    $612.50
    500
    $2.20
    $1 100.00
    1000
    $1.86
    $1 860.00
    2000
    $1.76
    $3 520.00
    5000
    $1.70
    $8 500.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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