IRG4BC30KDP

IRG4BC30KDPBF vs IRG4BC30KDPBF,IRG4BC30KD vs IRG4BC30KDPBF.

 
PartNumberIRG4BC30KDPBFIRG4BC30KDPBF,IRG4BC30KDIRG4BC30KDPBF.
DescriptionIGBT Transistors 600V UltraFast 8-25kHz
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.21 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C28 A--
Pd Power Dissipation100 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
Continuous Collector Current Ic Max28 A--
Height8.77 mm--
Length10.54 mm--
Width4.69 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Part # AliasesSP001532644--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRG4BC30KDPBF IGBT Transistors 600V UltraFast 8-25kHz
IRG4BC30KDPBF IGBT Transistors 600V UltraFast 8-25kHz
IRG4BC30KDPBF,IRG4BC30KD New and Original
IRG4BC30KDPBF. New and Original
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