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BC857QASZ

P1-P3P4-P6P7-P9P10-P12P13-P14
NXP Semiconductors
BC857QAS
45 V, 100 mA PNP/PNP general-purpose transistor
BC857QAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 8 July 2015 3 / 13
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - -50 V
V
CEO
collector-emitter voltage open base - -45 V
V
EBO
emitter-base voltage open collector - -6 V
I
C
collector current - -100 mA
I
CM
peak collector current - -200 mA
I
BM
peak base current
single pulse; t
p
≤ 1 ms
- -100 mA
P
tot
total power dissipation T
amb
≤ 25 °C [1] - 230 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C [1] - 350 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
FR4 PCB, standard footprint
Fig. 2. Per device: Power derating curve
NXP Semiconductors
BC857QAS
45 V, 100 mA PNP/PNP general-purpose transistor
BC857QAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 8 July 2015 4 / 13
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 543 K/W
Per device
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 357 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-007378
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.02
0.01
0
0.05
FR4 PCB, standard footprint
Fig. 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
NXP Semiconductors
BC857QAS
45 V, 100 mA PNP/PNP general-purpose transistor
BC857QAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 8 July 2015 5 / 13
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
CB
= -30 V; I
E
= 0 A; T
j
= 150 °C - - -5 µAI
CBO
collector-base cut-off
current
V
CB
= -30 V; I
E
= 0 A; T
amb
= 25 °C - - -15 nA
I
EBO
emitter-base cut-off
current
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C - - -100 nA
h
FE
DC current gain V
CE
= -5 V; I
C
= -2 mA; T
amb
= 25 °C 200 - 450
I
C
= -10 mA; I
B
= -0.5 mA; T
amb
= 25 °C - - -100 mVV
CEsat
collector-emitter
saturation voltage
I
C
= -100 mA; I
B
= -5 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- - -300 mV
I
C
= -10 mA; I
B
= -0.5 mA; T
amb
= 25 °C - -760 - mVV
BEsat
base-emitter saturation
voltage
I
C
= -100 mA; I
B
= -5 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- -900 - mV
V
CE
= -5 V; I
C
= -2 mA; T
amb
= 25 °C -600 -660 -725 mVV
BE
base-emitter voltage
V
CE
= -5 V; I
C
= -10 mA; T
amb
= 25 °C - -710 -820 mV
C
C
collector capacitance V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- - 4 pF
C
E
emitter capacitance V
EB
= -0.5 V; I
C
= 0 A; f = 1 MHz;
T
amb
= 25 °C
- 10 - pF
f
T
transition frequency V
CE
= -5 V; I
C
= -10 mA; f = 100 MHz;
T
amb
= 25 °C
100 - - MHz
NF noise figure V
CE
= -5 V; I
C
= 0.2 mA; R
S
= 2 kΩ;
f = 1 MHz; B = 200 Hz; T
amb
= 25 °C
- - 10 dB
P1-P3P4-P6P7-P9P10-P12P13-P14

BC857QASZ

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 45V 100 mA PNP/PNP general-purpose
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