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BC857QASZ

P1-P3P4-P6P7-P9P10-P12P13-P14
NXP Semiconductors
BC857QAS
45 V, 100 mA PNP/PNP general-purpose transistor
BC857QAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 8 July 2015 6 / 13
006aab425
I
C
(mA)
- 10
- 1
- 10
3
- 10
2
- 1 - 10
200
400
600
h
FE
0
(1)
(2)
(3)
V
CE
= -5 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
V
CE
(V)
0 - 5- 4- 2 - 3- 1
006aab426
- 0.10
- 0.05
- 0.15
- 0.20
I
C
(A)
0
I
B
(mA) = - 3.5
- 0.7
- 3.15
- 2.8
- 1.4
- 2.1
- 2.45
- 1.75
- 1.05
- 0.35
T
amb
= 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
- 200
- 1200
- 400
- 600
- 800
- 1000
mle193
- 10
- 2
- 10
- 1
(1)
- 1
I
C
(mA)
V
BE
(mV)
- 10 - 10
2
- 10
3
(3)
(2)
V
CE
= -5 V
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 6. Base-emitter voltage as a function of collector
current; typical values
- 200
- 1200
- 400
- 600
- 800
- 1000
mle195
- 1- 10
- 1
I
C
(mA)
V
BEsat
(mV)
- 10 - 10
2
- 10
3
(1)
(3)
(2)
I
C
/I
B
= 20
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 7. Base-emitter saturation voltage as a function of
collector current; typical values
NXP Semiconductors
BC857QAS
45 V, 100 mA PNP/PNP general-purpose transistor
BC857QAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 8 July 2015 7 / 13
- 10
4
- 10
3
- 10
2
- 10
mle194
- 10
- 1
- 1 - 10
I
C
(mA)
V
CEsat
(mV)
- 10
2
- 10
3
(2)
(3)
(1)
I
C
/I
B
= 20
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab427
I
C
(mA)
- 10
- 1
- 10
2
- 10- 1
10
8
10
9
f
T
(Hz)
10
7
T
amb
= 25 °C;
V
CE
= -5 V;
f = 100 MHz
Fig. 9. Transition frequency as a function of collector
current; typical values
NXP Semiconductors
BC857QAS
45 V, 100 mA PNP/PNP general-purpose transistor
BC857QAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 8 July 2015 8 / 13
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
5
32
13-03-05Dimensions in mm
0.34
0.40
0.04
max
0.95
1.05
0.22
0.30
0.125
0.205
1.05
1.15
0.275 0.275
0.32
0.40
0.35 0.35
1
6 4
0.15
0.23
Fig. 10. Package outline DFN1010B-6 (SOT1216)
P1-P3P4-P6P7-P9P10-P12P13-P14

BC857QASZ

Mfr. #:
Buy BC857QASZ
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 45V 100 mA PNP/PNP general-purpose
Lifecycle:
New from this manufacturer.
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