OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MGA-635T6-TR1G

P1-P3P4-P6P7-P9P10-P10
MGA-635T6
GPS Low Noise Ampli er with Variable Bias
Current and Shutdown Function
Data Sheet
Description
Avago Technologies’ MGA-635T6 is a LNA designed
for GPS/ISM/Wimax applications in the (0.9-2.4)GHz
frequency range. The LNA uses Avago Technologies’s
proprietary GaAs Enhancement-mode pHEMT process to
achieve high gain operation with very low noise  gures
and high linearity. Noise  gure distribution is very tightly
controlled. Gain and supply current are guaranteed pa-
rameters. A CMOS compatible shutdown pin is included
to turn the LNA o and provide a variable bias.
The MGA-635T6 LNA is useable down to 1V operation.
It achieves low noise  gures and high gain even at 1V,
making it suitable for use in critical low power GPS/ISM
band applications.
Component Image
Surface Mount 2.0x1.3x0.4 mm
3
6-lead UTSLP
Features
Low Noise Figure : 0.74dB
High Gain : 14.5dB
High linearity and P1dB
GaAs E-pHEMT Technology
Low component count
Wide Supply Voltage : 1V to 3.6V
Shutdown current : < 0.1uA
CMOS compatible shutdown pin (VSD) current @
2.85V : 60uA
Adjustable bias current via one single external resis-
tor/voltage
Shutdown function
Small Footprint: 2 x 1.3mm
2
Low Pro le : 0.4 mm
Ext matching for non-GPS freq band operation
Speci cations
At 1.575GHz, 2.85V 6.3mA (Typ)
Gain = 14.5 dB (Typ)
NF = 0.74 dB (Typ)
IIP3 = 3.5 dBm (Typ)
IP1dB = 2.5 dBm (Typ)
S11 = -8 dB (Typ)
S22 = -10.4 dB (Typ)
At 1.575GHz, 2.85V 8mA (Typ)
Gain = 15.7 dB (Typ)
NF = 0.8 dB (Typ)
IIP3 = 3.5 dBm (Typ)
IP1dB = 1 dBm (Typ)
S11 = -11.8 dB (Typ)
S22 = -9.3 dB (Typ)
Applications
GPS, ISM & WiMax Bands LNA
Note:
Package marking provides orientation and identi cation
“3F” = Product Code
“Y” = Year of manufacture
“M” = Month of manufacture
Top View
.
3FYM
.
3FYM
Bottom View
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 40 V
ESD Human Body Model = 250 V
Refer to Avago Technologies Application Note A004R:
Electrostatic Discharge, Damage and Control.
2
Absolute Maximum Rating
[1]
T
A
=25C
Thermal Resistance
[3]
(Vdd = 2.85V, Ids = 4.9mA), jc = 73 C/W
Symbol Parameter Units Absolute Max.
Vdd Device Drain to Source Voltage
[2]
V 3.6
Ids Drain Current
[2]
mA 15
P
in,max
CW RF Input Power (Vdd = 2.85V, Ids=4.9mA) dBm +10
P
diss
Total Power Dissipation
[4]
mW 54
T
j
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Assuming DC quiescent conditions
3. Thermal resistance measured using Infra-Red measurement technique.
4. Board (module belly) temperature TB is 25 C. Derate 14mW/ C for TB>146 C.
3
Electrical Speci cations
TA = 25 °C, DC bias for RF parameters is Vdd = Vsd = +2.85V , measured on demo board (see Fig. 4) unless otherwise
speci ed.
VDD= VSD = +2.85V, R1 = 22K Ohm, Freq=1.575GHz – Typical Performance
[7]
Table 1. Performance table at nominal operating conditions
Symbol Parameter and Test Condition Units Min. Typ Max.
G Gain dB 12.5 14.5 16.3
NF Noise Figure dB - 0.74 1.3
IP1dB Input 1dB Compressed Power dBm 2.5
IIP3
[8]
Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz) dBm 3.5
S11 Input Return Loss dB -8
S22 Output Return Loss dB - 10.4
Ids Supply Current mA 6.3 10
Ish Shutdown Current @ VSD = 0V uA 0.1
Vds Supply Voltage V 2.85
IP1dB
1710M
Out of Band IP1dB (DCS 1710MHz) blocking dBm 4
IIP3
OUT
Out of Band IIP3 (DCS 1775MHz & 1950MHz) dBm 6.5
VDD = +2V, VDD= +1.5V & VDD= +1.0V, Freq=1.575GHz – Typical Performance (VSD=VDD, R1=0 Ohm)
Table 2. Typical performance at low operation voltages with R1 (see Fig 4) set to 0 Ohm
Symbol Parameter and Test Condition Units Vdd=2V Vdd=1.5V Vdd=1V
G Gain dB 16.2 15.5 13.8
NF Noise Figure dB 0.7 0.8 0.9
IP1dB Input 1dB Compressed Power dBm -1.8 -3.5 -5.2
IIP3
[8]
Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz) dBm 7.5 5.3 3.6
S11 Input Return Loss dB -10.4 -9 -7.5
S22 Output Return Loss dB -14 -13 -11
Ids Supply Current mA 15 10 4.5
Ish Shutdown Current @ VSD = 0V uA 0.1 0.1 0.1
Vds Supply Voltage V 2 1.5 1.0
IP1dB
1710M
Out of Band IP1dB (DCS 1710MHz) blocking dBm -0.5 -2.2 -4
IIP3
OUT
Out of Band IIP3 (DCS 1775MHz & 1950MHz) dBm 10.5 8.3 7
Notes:
7. Measurements at 1.575GHz obtained using demo board described in Fig 4.
8. 1.575GHz IIP3 test condition: FRF1 = 1575 MHz, FRF2 = 1577.5 GHz with input power of -20dBm per tone measured at lower side band
P1-P3P4-P6P7-P9P10-P10

MGA-635T6-TR1G

Mfr. #:
Buy MGA-635T6-TR1G
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier GPS LNA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet