PTFA043002E V1

PTFA043002E
Data Sheet 7 of 10 Rev. 03.1, 2009-02-20
a043002e_cd-dtl_0702212
R12
Q1
QQ1
R9
R8
R7
R14
R10
R11
R13
C35
C33
C10 C12
C34
VDD
C11
a043002e_cd-02_070212
RF_OUT
VDD
RF_IN
R12
Q1
QQ1
R9
R8R7
R14
R10
R11
R1
R3
R4
R5
R6
C5
C4
C9
C2
C3
R2
C1
C6 C8
R13
C35
C33
C10
C12
C34
C13
C17
C15
C16
C31
C32
C29
C25
C26
C24
C19
C20
C18
C21
C23
C22
C28
C27
L2
L1
VDD
VDD
VDD
C14
C30
C7
C11
Reference circuit assembly diagram* (not to scale)—rated for 300 W (PEP) only
Reference Circuit (cont.)
*Gerber Files for this circuit available on request.
PTFA043002E
Data Sheet 8 of 10 Rev. 03.1, 2009-02-20
Reference Circuit (cont.)
Component Description Suggested Manufacturer P/N or Comment
C1, C32 Ceramic capacitor, 2.7 pF ATC 100B 2R7
C2 Capacitor, 15 pF ATC 100B 150
C3, C8, C9, C12, Ceramic capacitor, 75 pF ATC 100B 750
C16, C17, C18, C24
C4, C15 Ceramic capacitor, 2.4 pF ATC 100B 2R4
C5, C13 Ceramic capacitor, 8.2 pF ATC 100B 8R2
C6, C10 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C7, C11 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND
C14 Ceramic capacitor, 4.8 pF ATC 100B 4R8
C19, C20, C25, C26 Capacitor, 1 µF ATC 920C105
C21, C22, C27, C28 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPS106K050R0400
C23, C29 Ceramic capacitor, 0.01 µF ATC 200B 103
C30 Ceramic capacitor, 6.8 pF ATC 100B 6R8
C31 Ceramic capacitor, 6.2 pF ATC 100B 6R2
C33, C34, C35 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1, R14 Chip Resistor 100 ohms Digi-Key P100ECT-ND
R2, R13 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND
R3, R12 Chip Resistor 22 ohms Digi-Key P22KECT-ND
R4, R7 Chip Resistor 3.3 k-ohms Digi-Key P3.3KECT-ND
R5, R8 Chip Resistor 10 ohms Digi-Key P10ECT-ND
R6, R9 Chip Resistor 5.1 k-ohms Digi-Key P5.1KECT-ND
R10 Chip Resistor 1.0 k-ohms Digi-Key P1KGCT-ND
R11 Chip Resistor 1.1 k-ohms Digi-Key P1.1KGCT-ND
See next page for package information
PTFA043002E
Data Sheet 9 of 10 Rev. 03.1, 2009-02-20
C
L
S
41.15
[1.620]
1.63
[.064]
2.18
[.086] SPH
31.24±0.28
[1.230±.011]
35.56
[1.400]
D
G
D
16.61±0.51
[.654±.020]
2X R 1.59
[.063]
2X 3.18
[.125]
9.40
[.370 ]
0.038 [.0015]
-A-
2X 45°±5° X 1.19
[.047]
4.55±0.38
[.179±.015]
Flange 10.16
[.400]
4X 3.23±0.25
[.127±.010]
G
H-30275-4
[.360 ]
+.004
–.006
LID 9.14
+0.10
–0.15
4X 11.68
[.460]
13.72
[.540]
C
L
C
L
+0.10
–0.15
+.004
–.006
Package Outline Specifications
Package H-30275-4
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.13 +0.051/–0.025 [.005 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 11.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
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PTFA043002E V1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
RF MOSFET Transistors RFP-LDMOS GOLDMOS 8
Lifecycle:
New from this manufacturer.
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