PTFA043002E V1

Mfr. #:: PTFA043002E V1
Manufacturer:: Infineon Technologies
Description:: RF MOSFET Transistors RFP-LDMOS GOLDMOS 8
Lifecycle:: New from this manufacturer.
Datasheet:: PTFA043002E V1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: PTFA043002E V1 Datasheet PTFA043002E V1 Datasheet (P4-P6)PTFA043002E V1 Datasheet (P7-P9)PTFA043002E V1 Datasheet (P10)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: RF MOSFET Transistors

RoHS:: Y

Transistor Polarity:: N-Channel

Technology:: Si

Id - Continuous Drain Current:: 1.55 A

Vds - Drain-Source Breakdown Voltage:: 65 V

Rds On - Drain-Source Resistance:: 80 mOhms

Gain:: 16 dB

Output Power:: 300 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Mounting Style:: SMD/SMT

Package / Case:: H-30275-4

Packaging:: Tray

Configuration:: Dual

Height:: 4.55 mm

Length:: 41.15 mm

Operating Frequency:: 470 MHz to 860 MHz

Type:: RF Power MOSFET

Width:: 10.16 mm

Brand:: Infineon Technologies

Channel Mode:: Enhancement

Pd - Power Dissipation:: 761 W

Product Type:: RF MOSFET Transistors

Factory Pack Quantity:: 1

Subcategory:: MOSFETs

Vgs - Gate-Source Voltage:: 12 V

Part # Aliases:: FA043002EV1XP

Tags: PTFA043002, PTFA043, PTFA04, PTFA0, PTFA, PTF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PTFA043002E V1 Description

***et Europe: LDMOS FET, High Power RF, 300W, 470-860MHz, H-30275-4 Pkg

***i-Key: IC FET RF LDMOS 300W H-30275-4

***el Electronic: Aluminum Electrolytic Capacitors 220μF Radial, Can - SMD ±20% Tape & Reel (TR) UCW 0.394 10.00mm Surface Mount General Purpose 600mA Aluminum Electrolytic Capacitors - SMD 35volts 220uF 105c 8X10

Market price

Part #	Mfg.	Description	Stock
PTFA043002EV1XWSA1 DISTI # V36:1790_17697511	Infineon Technologies AG	PTFA043002EV1XWSA1	0
PTFA043002E V1 DISTI # PTFA043002EV1-ND	Infineon Technologies AG	IC FET RF LDMOS 300W H-30275-4 RoHS: Compliant Min Qty: 30 Container: Tray	Limited Supply - Call
PTFA043002E V1 DISTI # 726-PTFA043002EV1	Infineon Technologies AG	RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 RoHS: Compliant	0
PTFA043002EV1	Infineon Technologies AG	RoHS: Not Compliant	10

Image	Part #	Description
	Mfr.#: PTFA043002E V1 OMO.#: OMO-PTFA043002E-V1	RF MOSFET Transistors RFP-LDMOS GOLDMOS 8
	Mfr.#: PTFA043002E V1 OMO.#: OMO-PTFA043002E-V1-INFINEON-TECHNOLOGIES	IC FET RF LDMOS 300W H-30275-4
	Mfr.#: PTFA043002E OMO.#: OMO-PTFA043002E-1190	New and Original
	Mfr.#: PTFA043002EV1 OMO.#: OMO-PTFA043002EV1-1190	New and Original
	Mfr.#: PTFA04300E OMO.#: OMO-PTFA04300E-1190	New and Original

PTFA043002E V1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes