 |  | | |
| PartNumber | PTFA043002E V1 | PTFA043002E | PTFA043002EV1 |
| Description | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | ||
| Manufacturer | Infineon | - | INFINEON |
| Product Category | RF MOSFET Transistors | - | RF FETs |
| RoHS | Y | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Id Continuous Drain Current | 1.55 A | - | - |
| Vds Drain Source Breakdown Voltage | 65 V | - | - |
| Rds On Drain Source Resistance | 80 mOhms | - | - |
| Gain | 16 dB | - | - |
| Output Power | 300 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | H-30275-4 | - | - |
| Packaging | Tray | - | - |
| Configuration | Dual | - | - |
| Height | 4.55 mm | - | - |
| Length | 41.15 mm | - | - |
| Operating Frequency | 470 MHz to 860 MHz | - | - |
| Type | RF Power MOSFET | - | - |
| Width | 10.16 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Channel Mode | Enhancement | - | - |
| Pd Power Dissipation | 761 W | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Part # Aliases | FA043002EV1XP | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
PTFA043002E V1 | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | |
Infineon Technologies |
PTFA043002E V1 | IC FET RF LDMOS 300W H-30275-4 | |
| PTFA043002E | New and Original | ||
| PTFA043002EV1 | New and Original | ||
| PTFA04300E | New and Original |