SIA910EDJ-T1-GE3 Datasheet SIA910EDJ-T1-GE3 | P1-P3

Vishay Siliconix

SiA910EDJ

Document Number: 65535

S13-0460-Rev. B, 04-Mar-13

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Dual N-Channel 12 V (D-S) MOSFET

FEATURES

• TrenchFET

®

Power MOSFET

• Thermally Enhanced PowerPAK

®

SC-70

Package

- Small Footprint Area

- Low On-Resistance

• Typical ESD Protection: 2400 V

• 100 % R

g

Tested

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Load Switch for Portable Applications

• High Frequency DC/DC Converter

• DC/DC Converter

Notes:

a. Package limited

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 110 °C/W.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

()

I

D

(A)

a

Q

g

(Typ.)

12

0.028 at V

GS

= 4.5 V

4.5

6.2 nC0.033 at V

GS

= 2.5 V

4.5

0.042 at Vgs = 1.8 V 4.5

S

1

D

1

G

2

S

2

G

1

D

2

1

6

5

4

2

3

2.05 mm

PowerPAK SC-70-6 Dual

D

1

D

2

Ordering Information: SiA910EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

Marking Code

X X X

C F X

Lot Traceability

and Date code

Part # code

N-Channel MOSFET

S

2

D

2

G

2

S

1

D

1

G

1

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

DS

12

V

Gate-Source Voltage V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

4.5

a

A

T

C

= 70 °C

4.5

a

T

A

= 25 °C

4.5

a, b, c

T

A

= 70 °C

4.5

a, b, c

Pulsed Drain Current

I

DM

20

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

4.5

a

T

A

= 25 °C

1.6

b, c

Maximum Power Dissipation

T

C

= 25 °C

P

D

7.8

W

T

C

= 70 °C

5

T

A

= 25 °C

1.9

b, c

T

A

= 70 °C

1.2

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t  5 s R

thJA

52 65

°C/W

Maximum Junction-to-Case (Drain) Steady State

R

thJC

12.5 16

Vishay Siliconix

SiA910EDJ

www.vishay.com

2

Document Number: 65535

S13-0460-Rev. B, 04-Mar-13

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 250 µA

12 V

V

DS

Temperature Coefficient V

DS

/T

J

I

D

= 250 µA

8

mV/°C

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

- 2.5

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

0.4 1 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 8 V

± 5

µA

V

DS

= 0 V, V

GS

= ± 4.5 V

± 0.5

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 12 V, V

GS

= 0 V

1

V

DS

= 12 V, V

GS

= 0 V, T

J

= 55 °C

10

On-State Drain Current

a

I

D(on)

V

DS

 5 V, V

GS

= 4.5 V

10 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

4.5 V, I

D

= 5.2 A

0.023 0.028



V

GS

2.5 V, I

D

= 4.8 A

0.027 0.033

V

GS

1.8 V, I

D

= 2.5 A

0.035 0.042

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 5.2 A

23 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= 6 V, V

GS

= 0 V, f = 1 MHz

455

pFOutput Capacitance

C

oss

190

Reverse Transfer Capacitance

C

rss

150

Total Gate Charge

Q

g

V

DS

= 6 V, V

GS

= 8 V, I

D

= 6.8 A

10.5 16

nC

V

DS

= 6 V, V

GS

= 4.5 V, I

D

= 6.8 A

6.2 9.5

Gate-Source Charge

Q

gs

0.8

Gate-Drain Charge

Q

gd

1.6

Gate Resistance

R

g

f = 1 MHz 0.8 4 8 

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 6 V, R

L

= 1.1 

I

D

 5.4 A, V

GEN

= 4.5 V, R

g

= 1 

10 15

ns

Rise Time

t

r

12 20

Turn-Off Delay Time

t

d(off)

25 40

Fall Time

t

f

12 20

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 6 V, R

L

= 1.1 

I

D

 5.4 A, V

GEN

= 10 V, R

g

= 1 

510

Rise Time

t

r

10 15

Turn-Off Delay Time

t

d(off)

20 30

Fall Time

t

f

10 15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

4.5

A

Pulse Diode Forward Current

I

SM

20

Body Diode Voltage

V

SD

I

S

= 5.4 A, V

GS

0 V

0.8 1.2 V

Body Diode Reverse Recovery Time

t

rr

I

F

= 5.4 A, dI/dt = 100 A/µs, T

J

= 25 °C

25 50 ns

Body Diode Reverse Recovery Charge

Q

rr

10 20 nC

Reverse Recovery Fall Time

t

a

13

ns

Reverse Recovery Rise Time

t

b

12

Vishay Siliconix

SiA910EDJ

Document Number: 65535

S13-0460-Rev. B, 04-Mar-13

www.vishay.com

3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Gate Current vs. Gate-Source Voltage

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

- Gate Current (mA)I

GSS

V

GS

- Gate-to-Source Voltage (V)

0

1

2

3

4

03691215

T

J

= 25 °C

0

4

8

12

16

20

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

GS

=5V thru 2 V

V

GS

=1.5V

V

GS

=1V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

- On-Resistance (Ω)R

DS(on)

I

D

- Drain Current (A)

0.00

0.02

0.04

0.06

0.08

0 5 10 15 20

V

GS

=4.5V

V

GS

=2.5V

V

GS

=1.8V

Gate Current vs. Gate-Source Voltage

Transfer Characteristics

Capacitance

- Gate Current (A)I

GSS

V

GS

- Gate-to-Source Voltage (V)

10

-10

10

-9

10

-8

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

03691215

T

J

= 150 °C

T

J

= 25 °C

0

2

4

6

8

10

0.0 0.3 0.6 0.9 1.2 1.5

T

C

= 25 °C

T

C

= 125 °C

T

C

= - 55 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

0

200

400

600

800

036912

C

iss

C

oss

C

rss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

SIA910EDJ-T1-GE3

SIA910EDJ-T1-GE3

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