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SIA910EDJ-T1-GE3

P1-P3P4-P6P7-P9
Vishay Siliconix
SiA910EDJ
www.vishay.com
4
Document Number: 65535
S13-0460-Rev. B, 04-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
0
2
4
6
8
048 12
V
DS
=9.6V
V
DS
=6V
I
D
=6.8 A
V
DS
=3V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.2
0.3
0.4
0.5
0.6
0.7
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 50 - 25 0 25 50 75 100 125 150
V
GS
=4.5V,2.5V;I
D
=5.5A
V
GS
=1.8V;I
D
=2.5A
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
0.00
0.02
0.04
0.06
0.08
012345
I
D
= 5.2 A; T
J
= 25 °C
I
D
=2.5A;
T
J
= 25 °C
I
D
=5.2A;T
J
= 125 °C
I
D
=2.5A;T
J
= 125 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
Vishay Siliconix
SiA910EDJ
Document Number: 65535
S13-0460-Rev. B, 04-Mar-13
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 °C
Single Pulse
100 ms
Limited byR
DS(on)
*
BVDSS Limited
1ms
100 µs
10 ms
1s,10s
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
Current Derating*
0
3
6
9
12
15
0 25 50 75 100 125 150
Package Limited
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power Derating
0
2
4
6
8
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
Vishay Siliconix
SiA910EDJ
www.vishay.com
6
Document Number: 65535
S13-0460-Rev. B, 04-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65535
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
0.1
0.01
Normalized Ef fective T ransient
Thermal Impedance
10
-3
10
-2
1 10 1000 10
-1
10
-4
100
Square Wave Pulse Duration (s)
Single Pulse
0.02
0.05
0.1
0.2
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
th JA
= 110 °C/W
3. T
JM
- T
A
= P
DM
Z
th JA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
10
-1
10
-4
1
0.01
Square Wave Pulse Duration (s)
Normalized Ef fective T ransient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
P1-P3P4-P6P7-P9

SIA910EDJ-T1-GE3

Mfr. #:
Buy SIA910EDJ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 12V Vds 8V Vgs PowerPAK SC-70
Lifecycle:
New from this manufacturer.
Delivery:
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