IR2153SPBF

Features
Integrated 600V half-bridge gate driver
15.6V zener clamp on Vcc
True micropower start up
Tighter initial deadtime control
Low temperature coefficient deadtime
Shutdown feature (1/6th Vcc) on C
T
pin
Increased undervoltage lockout Hysteresis (1V)
Lower power level-shifting circuit
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
Low side output in phase with RT
Internal 50nsec (typ.) bootstrap diode (IR2153D)
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
Also available LEAD-FREE
(NOTE:For new designs, we recommend
IR’s new product IRS2153D)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
600V max.
Duty Cycle 50%
T
r
/T
p
80/40ns
V
clamp
15.6V
Deadtime (typ.) 1.2 µs
Typical Connections
VB
HO
VS
LO
VCC
RT
CT
COM
600V
MAX
Shutdown
IR2153(S)
IR2153D
VB
HO
VS
LO
VCC
RT
CT
COM
600V
MAX
Shutdown
IR2153(D)(S) &(PbF)
Description
The IR2153D(S) are an improved version of the
popular IR2155 and IR2151 gate driver ICs, and incor-
porates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS
555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature
has been designed into the C
T
pin, so that both gate driver outputs can be disabled using a low voltage control
signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout
threshold on V
CC
has been reached, resulting in a more stable profile of frequency vs time at startup.
Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by
increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing
the latch immunity of the device, and providing comprehensive ESD protection on all pins.
www.irf.com 1
Packages
8 Lead PDIP
8 Lead SOIC
Data Sheet No. PD60062 revO
IR2153(D)(S) & (PbF)
2 www.irf.com
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Note 1: This IC contains a zener clamp structure between the chip V
CC
and COM which has a nominal breakdown
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the V
CLAMP
specified in the Electrical Characteristics section.
Note 2: Care should be taken to avoid output switching conditions where the V
S
node flies inductively below ground by
more than 5V.
Note 3: Enough current should be supplied to the V
CC
pin of the IC to keep the internal 15.6V zener diode clamping the
voltage at this pin.
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol Definition Min. Max. Units
V
Bs
High side floating supply voltage V
CC
- 0.7 V
CLAMP
V
S
Steady state high side floating supply offset voltage -3.0 (note 2) 600
V
CC
Supply voltage 10 V
CLAMP
I
CC
Supply current (note 3) 5 mA
T
J
Junction temperature -40 125 °C
V
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition Min. Max. Units
V
B
High side floating supply voltage -0.3 625
V
S
High side floating supply offset voltage V
B
- 25 V
B
+ 0.3
V
HO
High side floating output voltage V
S
- 0.3 V
B
+ 0.3
V
LO
Low side output voltage -0.3 V
CC
+ 0.3
V
RT
R
T
pin voltage -0.3 V
CC
+ 0.3
V
CT
C
T
pin voltage -0.3 V
CC
+ 0.3
I
CC
Supply current (note 1) 25
I
RT
R
T
pin current -5 5
dV
s
/dt Allowable offset voltage slew rate -50 50 V/ns
P
D
Maximum power dissipation @ T
A
+25°C (8 Lead DIP) 1.0
(8 Lead SOIC) 0.625
Rth
JA
Thermal resistance, junction to ambient (8 Lead DIP) 125
(8 Lead SOIC) 200
T
J
Junction temperature -55 150
T
S
Storage temperature -55 150 °C
T
L
Lead temperature (soldering, 10 seconds) 300
V
°C/W
W
mA
IR2153(D)(S) & (PbF)
www.irf.com 3
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Symbol Component Min. Max. Units
R
T
Timing resistor value 10 kΩ
C
T
C
T
pin capacitor value 330 pF
Recommended Component Values
IR2153 RT vs Frequency
10
100
1000
10000
100000
1000000
10 100 1000 10000 100000 1000000
RT (ohms)
Frequency (Hz)
330pf
470pF
1nF
2.2nF
4.7nF
10nF
CT Values

IR2153SPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Gate Drivers HALF BRDG DRVR 600V 15.6Vclamp 1.2
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union