IR2153SPBF

IR2153(D)(S) & (PbF)
4 www.irf.com
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Floating Supply Characteristics
Symbol Definition Min. Typ. Max. Units Test Conditions
I
QBSUV
Micropower startup V
BS
supply current 0 10 V
CC
V
CCUV-
I
QBS
Quiescent VBS supply current — 30 50
V
BSMIN
Minimum required V
BS
voltage for proper — 4.0 5.0 V V
CC
=V
CCUV+
+ 0.1V
functionality from R
T
to HO
I
LK
Offset supply leakage current 50 μAV
B
= V
S
= 600V
VF Bootstrap diode forward voltage (IR2153D) 0.5 1.0 V IF = 250mA
μA
Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 12V, C
L
= 1000 pF, C
T
= 1 nF and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the
respective output leads: HO or LO.
Symbol Definition Min. Typ. Max. Units Test Conditions
V
CCUV+
Rising V
CC
undervoltage lockout threshold 8.1 9.0 9.9
V
CCUV-
Falling V
CC
undervoltage lockout threshold 7.2 8.0 8.8
V
CCUVH
V
CC
undervoltage lockout Hysteresis 0.5 1.0 1.5
I
QCCUV
Micropower startup V
CC
supply current 75 150 V
CC
V
CCUV-
I
QCC
Quiescent V
CC
supply current 500 950
V
CLAMP
V
CC
zener clamp voltage 14.4 15.6 16.8 V I
CC
= 5mA
Low Voltage Supply Characteristics
V
μA
Symbol Definition Min. Typ. Max. Units Test Conditions
f
osc
Oscillator frequency 19.4 20 20.6 R
T
= 36.9kΩ
94 100 106 RT = 7.43kΩ
d R
T
pin duty cycle 48 50 52 % fo < 100kHz
I
CT
C
T
pin current
0.001 1.0 uA
I
CTUV
UV-mode C
T
pin pulldown current 0.30 0.70 1.2 mA V
CC
= 7V
V
CT+
Upper C
T
ramp voltage threshold
8.0
V
CT-
Lower C
T
ramp voltage threshold
4.0
V
CTSD
C
T
voltage shutdown threshold 1.8 2.1 2.4
V
RT+
High-level R
T
output voltage, V
CC
- V
RT
— 10 50 I
RT
= 100μA
100 300 I
RT
= 1mA
V
RT-
Low-level R
T
output voltage
— 10 50 I
RT
= 100μA
100 300 I
RT
= 1mA
V
RTUV
UV-mode R
T
output voltage
0 100 V
CC
V
CCUV-
V
RTSD
SD-Mode R
T
output voltage, V
CC
- V
RT
— 10 50 I
RT
= 100μA,
V
CT
= 0V
10 300 I
RT
= 1mA,
V
CT
= 0V
Oscillator I/O Characteristics
V
mV
kHz
IR2153(D)(S) & (PbF)
www.irf.com 5
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Symbol Description
V
CC
Logic and internal gate drive supply voltage
R
T
Oscillator timing resistor input
C
T
Oscillator timing capacitor input
COM IC power and signal ground
LO Low side gate driver output
V
S
High voltage floating supply return
HO High side gate driver output
V
B
High side gate driver floating supply
Lead Definitions
Lead Assignments
8 Lead PDIP 8 Lead SOIC
IR2153D IR2153(S)
NOTE: The IR2153D is offered in 8 lead PDIP only.
Symbol Definition Min. Typ. Max. Units Test Conditions
V
OH
High level output voltage, V
BIAS
-V
O
0 100 I
O
= OA
VOL Low-level output voltage, VO 0 100 I
O
= OA
VOL_UV UV-mode output voltage, VO 0 100 I
O
= OA
V
CC
V
CCUV-
t
r
Output rise time 80 150
t
f
Output fall time 45 100
t
sd
Shutdown propogation delay 660
t
d
Output deadtime (HO or LO) 0.75 1.20 1.65 μsec
Gate Driver Output Characteristics
mV
nsec
Electrical Characteristics (cont.)
IR2153(D)(S) & (PbF)
6 www.irf.com
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Functional Block Diagram for IR2153(S)
Functional Block Diagram for IR2153D
V
B
PULSE
GEN
DELAY
HV
LEVEL
SHIFT
V
CC
PULSE
FILTER
DEAD
TIME
LO
V
S
COM
R
S
Q
15.6V
C
T
R
T
UV
DETECT
RQ
S
Q
DEAD
TIME
HO
LOGIC
-
-
-
+
+
+
R
R
R/2
R/2
D1
NOTE: The D1 is a separate die.
V
B
PULSE
GEN
DELAY
HV
LEVEL
SHIFT
V
CC
PULSE
FILTER
DEAD
TIME
LO
V
S
COM
R
S
Q
15.6V
C
T
R
T
UV
DETECT
RQ
S
Q
DEAD
TIME
HO
LOGIC
-
-
-
+
+
+
R
R
R/2
R/2

IR2153SPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Gate Drivers HALF BRDG DRVR 600V 15.6Vclamp 1.2
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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