AT49BV1604(T)/1614(T)
10
AC Read Waveforms
(1)(2)(3)(4)
Notes: 1. CE may be delayed up to t
ACC
- t
CE
after the address transition without impact on t
ACC
.
2. OE
may be delayed up to t
CE
- t
OE
after the falling edge of CE without impact on t
CE
or by t
ACC
- t
OE
after an address change
without impact on t
ACC
.
3. t
DF
is specified from OE or CE, whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
t
R
, t
F
< 5 ns
Output Test Load
Note: 1. This parameter is characterized and is not 100% tested.
AC Read Characteristics
Symbol Parameter
AT49LV16X4(T)-90 AT49BV16X4(T)-11
UnitsMin Max Min Max
t
ACC
Address to Output Delay 90 110 ns
t
CE
(1)
CE to Output Delay 90 110 ns
t
OE
(2)
OE to Output Delay 0 40 0 45 ns
t
DF
(3)(4)
CE or OE to Output Float 0 25 0 30 ns
t
OH
Output Hold from OE, CE or Address, whichever occurred
first
00ns
t
RO
RESET to Output Delay 800 800 ns
OUTPUT
VALID
OUTPUT
HIGH Z
RESET
OE
tOE
tCE
ADDRESS VALID
tDF
tOH
tACC
tRO
CE
ADDRESS
Pin Capacitance
f = 1 MHz, T = 25°C
(1)
Symbol Typ Max Units Conditions
C
IN
46pFV
IN
= 0V
C
OUT
812pFV
OUT
= 0V
AT49BV1604(T)/1614(T)
11
AC Byte/Word Load Waveforms
WE Controlled
CE Controlled
AC Byte/Word Load Characteristics
Symbol Parameter Min Max Units
t
AS
, t
OES
Address, OE Setup Time 0 ns
t
AH
Address Hold Time 100 ns
t
CS
Chip Select Setup Time 0 ns
t
CH
Chip Select Hold Time 0 ns
t
WP
Write Pulse Width (WE or CE) 100 ns
t
DS
Data Setup Time 100 ns
t
DH
, t
OEH
Data, OE Hold Time 10 ns
t
WPH
Write Pulse Width High 50 ns
AT49BV1604(T)/1614(T)
12
Program Cycle Waveforms
Sector or Chip Erase Cycle Waveforms
Notes: 1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased.
(See note 3 under Command Definitions.)
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
4. The t
WPH
time between the 5th and 6th bus cycle should be a minimum of 150 ns.
Program Cycle Characteristics
Symbol Parameter Min Typ Max Units
t
BP
Byte/Word Programming Time 20 50 µs
t
AS
Address Setup Time 0 ns
t
AH
Address Hold Time 100 ns
t
DS
Data Setup Time 100 ns
t
DH
Data Hold Time 10 ns
t
WP
Write Pulse Width 100 ns
t
WPH
Write Pulse Width High 50 ns
t
EC
Chip Erase Cycle Time 10 seconds
t
SEC
Sector Erase Cycle Time 200 ms
OE
PROGRAM CYCLE
INPUT
DATA
ADDRESS
A0
55
5555 5555
AA
2AAA
t
BP
t
WPH
t
WP
CE
WE
A0 -A19
DATA
t
AS
t
AH
t
DH
t
DS
5555
AA
OE
(1)
AA
80
Note 3
55 55
5555
5555
Note 2
AA
WORD 0
WORD 1 WORD 2
WORD 3
WORD 4
WORD 5
2AAA 2AAA
t
WPH
t
WP
CE
WE
A0-A19
DATA
t
AS
t
AH
t
EC
t
DH
t
DS
5555
(4)
(4)

AT49BV1614-11TI

Mfr. #:
Manufacturer:
Description:
IC FLASH 16M PARALLEL 48TSOP
Lifecycle:
New from this manufacturer.
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