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MRF8S7170NR3

P1-P3P4-P6P7-P9P10-P12P13-P13
MRF8S7170NR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for base station applications with frequencies from 728 to 768 MHz.
Can be used in Class AB and Class C for all typical cellular base station
modulation formats.
! Typical Single--Carrier W--CDMA Performance: V
DD
=28Volts,I
DQ
=
1200 mA, P
out
= 50 W atts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G
ps
(dB)
"
D
(%)
Output PAR
(dB)
ACPR
(dBc)
728 MHz 19.7 37.1 6.2 --38.7
748 MHz 19.5 37.0 6.1 --37.5
768 MHz 19.4 37.9 6.1 --37.8
! Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 170 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
), Designed for
Enhanced Ruggedness
! Typical P
out
@ 1 dB Compression Point ≃ 182 Watts CW
Features
! 100% PAR Tested for Guaranteed Output Power Capability
! Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
! Internally Matched for Ease of Use
! Integrated ESD Protection
! Greater Negative Gate--Source Voltage Range for Improved Class C Operation
! Designed for Digital Predistortion Error Correction Systems
! 225#C Capable Plastic Package
! RoHS Compliant
! In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +70 Vdc
Gate--Source Voltage V
GS
--6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
--65 to +150 #C
Case Operating Temperature T
C
150 #C
Operating Junction Temperature
(1,2)
T
J
225 #C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80#C, 170 W CW, 28 Vdc, I
DQ
= 1200 mA
Case Temperature 81#C, 50 W CW, 28 Vdc, I
DQ
= 1200 mA
R
$
JC
0.30
0.37
#C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8S7170N
Rev. 1, 10/2010
Freescale Semiconductor
Technical Data
728--768 MHz, 50 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 2021 --03, STYLE 1
O M -- 7 8 0 -- 2
PLASTIC
MRF8S7170NR3
% Freescale Semiconductor, Inc., 2010.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8S7170NR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 #C
Table 5. Electrical Characteristics (T
A
=25#C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
=70Vdc,V
GS
=0Vdc)
I
DSS
— — 10 &Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
=28Vdc,V
GS
=0Vdc)
I
DSS
— — 1 &Adc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 &Adc
On Characteristics
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 355 &Adc)
V
GS(th)
1.5 2.3 3 Vdc
Gate Quiescent Voltage
(V
DD
=28Vdc,I
D
= 1200 mAdc, Measured in Functional Test)
V
GS(Q)
2.3 3.1 3.8 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=2.9Adc)
V
DS(on)
0.1 0.22 0.3 Vdc
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 1200 mA, P
out
= 50 W Avg., f = 748 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Power Gain
G
ps
18.0 19.5 21.0 dB
Drain Efficiency "
D
34.0 37.0 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.7 6.1 — dB
Adjacent Channel Power Ratio ACPR — --37.5 --35.0 dBc
Input Return Loss IRL — -- 2 4 -- 9 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 1200 mA, P
out
=50WAvg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Frequency
G
ps
(dB)
"
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
728 MHz 19.7 37.1 6.2 --38.7 -- 1 3
748 MHz 19.5 37.0 6.1 --37.5 -- 2 4
768 MHz 19.4 37.9 6.1 --37.8 -- 1 6
1. Part internally matched both on input and output.
(continued)
MRF8S7170NR3
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
=25#C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 1200 mA, 728--768 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW P1dB — 182 — W
IMD Symmetry @ 160 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMD
sym
— 16 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
— 65 — MHz
Gain Flatness in 40 MHz Bandwidth @ P
out
=50WAvg. G
F
— 0.5 — dB
Gain Variation over Temperature
(--30#Cto+85#C)
(G — 0.017 — dB/#C
Output Power Variation over Temperature
(--30#Cto+85#C)
(P1dB — 0.0048 — dB/#C
P1-P3P4-P6P7-P9P10-P12P13-P13

MRF8S7170NR3

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Description:
RF MOSFET Transistors HV8 700MHz 50W OM780-2
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