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MRF8S7170NR3

P1-P3P4-P6P7-P9P10-P12P13-P13
4
RF Device Data
Freescale Semiconductor
MRF8S7170NR3
Figure 1. MRF8S7170NR3 Test Circuit Component Layout
B1
CUT OUT AREA
MRF8S7170N
Rev. 0
R1
C5
C6
C7
C1
C3
C4
R2
C2
C22 C23
C24 C25
C26
C15
C20 C14
C8
C9
C12 C13
C10 C11
C16 C17
C18 C19
C21
Ta ble 6. MRF8S7170NR3 Test Circuit Component Designations and V a lue s
Part Description Part Number Manufacturer
B1 Ferrite Bead, Short 2743019447 Fair--Rite
C1 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC
C2 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC
C3, C4 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC
C5 47 &F, 63 V Electrolytic Capacitor 476KXM063M Illinois Capacitor
C6 6.8 &F, 100 V Chip Capacitor C4532X7R1H685KT TDK
C7 100 pF Chip Capacitor ATC100B101JT500XT ATC
C8, C9 11 pF Chip Capacitors ATC100B110JT500XT ATC
C10, C12 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C11, C13 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC
C14 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC
C15, C16, C17, C22, C23 39 pF Chip Capacitors ATC100B390JT500XT ATC
C18, C19, C24, C25 10 &F, 25 V Chip Capacitors C5750X7R1E106KT TDK
C20 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC
C21, C26 470 &F, 63 V Electrolytic Capacitors 477KXM063M Illinois Capacitor
R1 2K ), 1/4 W Chip Resistor CRCW12062K00FKEA Vishay
R2 4.3 ), 1/4 W Chip Resistor CRCW12064R30FKEA Vishay
PCB 0.030*, +
r
=3.5 RF--35 Taconic
MRF8S7170NR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
17.8
21
20.6
20.2
19.8
19.4
19
18.6
18.2
17
17.4
IRL, INPUT RETURN LOSS (dB)
710
IRL
G
ps
ACPR
f, FREQUENCY (MHz)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 50 Watts Avg.
-- 1 5
-- 1 9
-- 2 3
"
D
, DRAIN
EFFICIENCY (%)
"
D
G
ps
, POWER GAIN (dB)
720 730 740 750 760 770 780 790
-- 2 7
PARC
PARC (dB)
ACPR (dBc)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--U
IM3--L
IM5--U
IM5--L
IM7--U
V
DD
=28Vdc,P
out
= 160 W (PEP), I
DQ
= 1200 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 748 MHz
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
P
out
, OUTPUT POWER (WATTS)
-- 1
-- 4
-- 5
50
0
-- 2
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
30
90 110 130
30
60
50
55
45
"
D
, DRAIN EFFICIENCY (%)
-- 1 d B = 4 2 W
"
D
PARC
ACPR (dBc)
-- 5 0
-- 2 0
-- 3 0
-- 4 0
-- 3 5
-- 4 5
20
G
ps
, POWER GAIN (dB)
18.5
19.5
19
17.5
17
G
ps
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
-- 2 d B = 6 0 W
-- 3 d B = 9 6 W
V
DD
=28Vdc,P
out
=50W(Avg.),I
DQ
= 1200 mA
Single--Carrier W--CDMA
IM7--L
35
-- 3 8
40
38
36
34
32
--35.5
-- 3 6
--36.5
-- 3 7
--37.5
-- 7
-- 11
-- 1
-- 1 . 5
-- 2
-- 2 . 5
0
-- 0 . 5
70
-- 3
40
-- 2 5
18
ACPR
V
DD
=28Vdc,I
DQ
= 1200 mA
f = 748 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
6
RF Device Data
Freescale Semiconductor
MRF8S7170NR3
TYPICAL CHARACTERISTICS
G
ps
ACPR
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
10
22
0
72
36
24
12
"
D
, DRAIN EFFICIENCY (%)
"
D
G
ps
, POWER GAIN (dB)
20
100 300
-- 6 0
ACPR (dBc)
0
-- 2 0
-- 3 0
Figure 6. Broadband Frequency Response
10
22
600
f, FREQUENCY (MHz)
V
DD
=28Vdc
P
in
=0dBm
I
DQ
= 1200 mA
14
650
GAIN (dB)
Gain
700 800 900 1000
IRL
-- 3 0
0
-- 1 5
-- 2 0
-- 2 5
IRL (dB)
12
768 MHz
18
16
60
48
-- 5 0
-- 4 0
748 MHz
728 MHz
20
-- 1 0
-- 5
14
12
748 MHz
728 MHz
1
V
DD
=28Vdc,I
DQ
= 1200 mA
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
748 MHz
768 MHz
768 MHz
728 MHz
10
18
16
750 850 950
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
13579
P1-P3P4-P6P7-P9P10-P12P13-P13

MRF8S7170NR3

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Buy MRF8S7170NR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV8 700MHz 50W OM780-2
Lifecycle:
New from this manufacturer.
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