I
DD
Specifications
Table 14: DDR4I
DD
Specifications and Conditions – 16GB (Die Revision A)
Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 2400 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1
810 mA
One bank ACTIVATE-PRECHARGE, Word Line Boost, IPP current I
PP0
1
54 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1
945 mA
Precharge standby current I
DD2N
2
900 mA
Precharge standby ODT current I
DD2NT
1
810 mA
Precharge power-down current I
DD2P
2
540 mA
Precharge quite standby current I
DD2Q
2
810 mA
Active standby current I
DD3N
2
990 mA
Active standby I
PP
current I
PP3N
2
54 mA
Active power-down current I
DD3P
2
720 mA
Burst read current I
DD4R
1
1620 mA
Burst write current I
DD4W
1
1710 mA
Burst refresh current (1x REF) I
DD5B
1
2295 mA
Burst refresh I
PP
current (1x REF) I
PP5B
1
297 mA
Self refresh current: Normal temp range (0–85°C) I
DD6N
2
540 mA
Self refresh current: Extended temp range (0–95°C) I
DD6E
2
630 mA
Self refresh current: Reduced temp range (0–45°C) I
DD6R
2
450 mA
Auto self refresh current (25°C) I
DD6A
2
360 mA
Auto self refresh current (45°C) I
DD6A
2
450 mA
Auto self refresh current (75°C) I
DD6A
2
630 mA
Bank interleave read current I
DD7
1
2115 mA
Bank interleave read IPP current I
PP7
1
162 mA
Maximum Power Down Current I
DD8
2
360 mA
Notes:
1. One module rank in the active I
DD/PP
, the other rank in I
DD2P/PP3N
.
2. All ranks in this I
DD/PP
condition.
16GB (x72, ECC DR) 260-Pin DDR4 SODIMM
I
DD
Specifications
09005aef861e841e
asf18c2gx72hz.pdf – Rev. F 8/16 EN
18
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