Table 15: DDR4I
DD
Specifications and Conditions – 16GB (Die Revision B)
Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 2400 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1
657 mA
One bank ACTIVATE-PRECHARGE, Word Line Boost, IPP current I
PP0
1
54 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1
756 mA
Precharge standby current I
DD2N
2
612 mA
Precharge standby ODT current I
DD2NT
1
675 mA
Precharge power-down current I
DD2P
2
450 mA
Precharge quite standby current I
DD2Q
2
540 mA
Active standby current I
DD3N
2
774 mA
Active standby I
PP
current I
PP3N
2
54 mA
Active power-down current I
DD3P
2
666 mA
Burst read current I
DD4R
1
1440 mA
Burst write current I
DD4W
1
1332 mA
Burst refresh current (1x REF) I
DD5B
1
2475 mA
Burst refresh I
PP
current (1x REF) I
PP5B
1
279 mA
Self refresh current: Normal temp range (0–85°C) I
DD6N
2
540 mA
Self refresh current: Extended temp range (0–95°C) I
DD6E
2
630 mA
Self refresh current: Reduced temp range (0–45°C) I
DD6R
2
360 mA
Auto self refresh current (25°C) I
DD6A
2
154.8 mA
Auto self refresh current (45°C) I
DD6A
2
360 mA
Auto self refresh current (75°C) I
DD6A
2
540 mA
Bank interleave read current I
DD7
1
1800 mA
Bank interleave read IPP current I
PP7
1
162 mA
Maximum Power Down Current I
DD8
2
450 mA
Notes:
1. One module rank in the active I
DD/PP
, the other rank in I
DD2P/PP3N
.
2. All ranks in this I
DD/PP
condition.
16GB (x72, ECC DR) 260-Pin DDR4 SODIMM
I
DD
Specifications
09005aef861e841e
asf18c2gx72hz.pdf – Rev. F 8/16 EN
19
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Table 16: DDR4I
DD
Specifications and Conditions – 16GB (Die Revision D)
Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 2666 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1
684 mA
One bank ACTIVATE-PRECHARGE, Word Line Boost, IPP current I
PP0
1
54 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1
792 mA
Precharge standby current I
DD2N
2
630 mA
Precharge standby ODT current I
DD2NT
1
675 mA
Precharge power-down current I
DD2P
2
450 mA
Precharge quite standby current I
DD2Q
2
540 mA
Active standby current I
DD3N
2
918 mA
Active standby I
PP
current I
PP3N
2
54 mA
Active power-down current I
DD3P
2
702 mA
Burst read current I
DD4R
1
1539 mA
Burst write current I
DD4W
1
1458 mA
Burst refresh current (1x REF) I
DD5B
1
2547 mA
Burst refresh I
PP
current (1x REF) I
PP5B
1
279 mA
Self refresh current: Normal temp range (0–85°C) I
DD6N
2
558 mA
Self refresh current: Extended temp range (0–95°C) I
DD6E
2
648 mA
Self refresh current: Reduced temp range (0–45°C) I
DD6R
2
378 mA
Auto self refresh current (25°C) I
DD6A
2
154.8 mA
Auto self refresh current (45°C) I
DD6A
2
378 mA
Auto self refresh current (75°C) I
DD6A
2
558 mA
Bank interleave read current I
DD7
1
1845 mA
Bank interleave read IPP current I
PP7
1
162 mA
Maximum Power Down Current I
DD8
2
450 mA
Notes:
1. One module rank in the active I
DD/PP
, the other rank in I
DD2P/PP3N
.
2. All ranks in this I
DD/PP
condition.
16GB (x72, ECC DR) 260-Pin DDR4 SODIMM
I
DD
Specifications
09005aef861e841e
asf18c2gx72hz.pdf – Rev. F 8/16 EN
20
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Temperature Sensor with SPD EEPROM
The temperature sensor continuously monitors the module's temperature and can be
read back at any time over the I
2
C bus shared with the serial presence-detect (SPD) EE-
PROM. Refer to JEDEC JC-42.4 EE1004 and TSE2004 device specifications for complete
details.
SPD Data
For the latest SPD data, refer to Micron's SPD page: micron.com/SPD.
Table 17: Temperature Sensor with SPD EEPROM Operating Conditions
Parameter/Condition Symbol Min Nom Max Units
Supply voltage V
DDSPD
2.5 V
Input low voltage: logic 0; all inputs V
IL
–0.5 V
DDSPD
× 0.3 V
Input high voltage: logic 1; all inputs V
IH
V
DDSPD
× 0.7 V
DDSPD
+ 0.5 V
Output low voltage: 3mA sink current V
DDSPD
> 2V V
OL
0.4 V
Input leakage current: (SCL, SDA) V
IN
= V
DDSPD
or V
SSSPD
I
LI
±5 µA
Output leakage current: V
OUT
= V
DDSPD
or V
SSSPD
, SDA in High-Z I
LO
±5 µA
Table 18: Temperature Sensor and EEPROM Serial Interface Timing
Parameter/Condition Symbol Min Max Units
Clock frequency
f
SCL 10 1000 kHz
Clock pulse width HIGH time
t
HIGH 260 ns
Clock pulse width LOW time
t
LOW 500 ns
Detect clock LOW timeout
t
TIMEOUT 25 35 ms
SDA rise time
t
R 120 ns
SDA fall time
t
F 120 ns
Data-in setup time
t
SU:DAT 50 ns
Data-in hold time
t
HD:DI 0 ns
Data out hold time
t
HD:DAT 0 350 ns
Start condition setup time
t
SU:STA 260 ns
Start condition hold time
t
HD:STA 260 ns
Stop condition setup time
t
SU:STO 260 ns
Time the bus must be free before a new transi-
tion can start
t
BUF 500 ns
Write time
t
W 5 ms
Warm power cycle time off
t
POFF 1 ms
Time from power-on to first command
t
INIT 10 ms
16GB (x72, ECC DR) 260-Pin DDR4 SODIMM
Temperature Sensor with SPD EEPROM
09005aef861e841e
asf18c2gx72hz.pdf – Rev. F 8/16 EN
21
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.

MTA18ASF2G72HZ-2G6E1

Mfr. #:
Manufacturer:
Micron
Description:
Memory Modules DDR4 16GB SOEDIMM
Lifecycle:
New from this manufacturer.
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