STPS30L30CG-TR

April 2010 Doc ID 5506 Rev 6 1/9
9
STPS30L30C
Low drop power Schottky rectifier
Features
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop
Low thermal resistance
Avalanche capability specified
Description
This dual center tap Schottky rectifier is suited for
switch mode power supplies and high frequency
DC to DC converters.
Packaged in TO-220AB, D
2
PAK and I
2
PAK, this
device is intended for use in low voltage, high
frequency inverters, free-wheeling and polarity
protection applications.
Figure 1. Electrical characteristics
(a)
Table 1. Device summary
I
F(AV)
2 x 15 A
V
RRM
30 V
T
j
(max) 150 °C
V
F
(typ) 0.37 V
a. V
ARM
and I
ARM
must respect the reverse safe
operating area defined in Figure 12 V
AR
and I
AR
are
pulse measurements (t
p
< 1 µs). V
R
, I
R
, V
RRM
and V
F
,
are static characteristics
A1
K
A2
TO-220AB
STPS30L30CT
A1
A2
K
K
A1
A2
K
I
2
PAK
STPS30L30CR
A1
A2
K
D
2
PAK
STPS30L30CG
I
F
2 x I
O
I
O
I
R
I
AR
V
F(I
o
)
V
To
V
F(2xI
o
)
V
F
V
I
I
V
V
R
V
RRM
"Reverse"
"Forward"
V
AR
X
X
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Characteristics STPS30L30C
2/9 Doc ID 5506 Rev 6
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.24 x I
F(AV)
+ 0.009 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 30 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current δ = 0.5 T
c
= 140 °C,
Per diode
Per device
15
30
A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal, 220 A
I
RRM
Peak repetitive reverse current t
p
= 2 µs square, F= 1 kHz square 1 A
I
RSM
Non repetitive peak reverse current t
p
= 100 µs square 3 A
P
ARM
(1)
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 5300 W
V
ARM
(2)
Maximum repetitive peak avalanche
voltage
t
p
< 1 µs T
j
< 150 °C
I
AR
< 35 A
45 V
V
ASM
(2)
Maximum single pulse peak
avalanche voltage
t
p
< 1 µs T
j
< 150 °C
I
AR
< 35 A
45 V
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(3)
150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 12
3. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j a()
--------------------------
<
Table 3. Thermal resistance
(1)
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
To ta l
1.5
0.8
°C/W
R
th(c)
Coupling 0.1
1. When the diodes 1 and 2 are used simultaneously: Δ T
j
(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
1.5 mA
T
j
= 125 °C 170 350 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 15 A
0.46
V
T
j
= 125 °C 0.33 0.37
T
j
= 25 °C
I
F
= 30A
0.57
T
j
= 125 °C 0.43 0.5
1. Pulse test: t
p
= 380 µs, δ < 2%
STPS30L30C Characteristics
Doc ID 5506 Rev 6 3/9
Figure 2. Average forward power dissipation
versus average forward current
(per diode)
Figure 3. Average forward current per diode
versus ambient temperature
(δ = 0.5)
0 2 4 6 8 101214161820
0
1
2
3
4
5
6
7
8
9
10
IF(av) (A)
PF(av)(W)
T
δ
=tp/T
tp
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
0 25 50 75 100 125 150
0
2
4
6
8
10
12
14
16
IF
(
av
)(
A
)
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j-c)
Rth(j-a)=50°C/W
T
δ
=tp/T
tp
Tamb(°C)
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5. Normalized avalanche power
derating versus junction
temperature
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
0.001
0
0.2
0.4
0.6
0.8
1
1.2
25 50 75 100 125 150
T (°C)
j
P(T)
P (25°C)
ARM j
ARM
Figure 6. Non repetitive surge peak forward
current versus overload duration,
(maximum values per diode)
Figure 7. Relative variation of thermal
impedance junction to case
versus pulse duration
1E-3 1E-2 1E-1 1E+0
0
25
50
75
100
125
150
175
200
225
250
IM(A)
Tc=25°C
Tc=110°C
Tc=75°C
t(s)
IM
t
δ=0.5
1E-4 1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
δ
=tp/T
tp
Single pulse
δ = 0.5
δ = 0.2
δ = 0.1

STPS30L30CG-TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 2X15 Amp 30 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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