June 2015
DocID027593 Rev 2
1/13
This is information on a product in full production.
www.st.com
STL90N6F7
N-channel 60 V, 0.0046 Ω typ., 90 A STripFET™ F7 Power
MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max I
D
STL90N6F7 60 V 0.0054 Ω 90 A
Among the lowest R
DS(on)
on the market
Excellent figure of merit (FoM)
Low C
rss
/C
iss
ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Order code Marking Package Packing
STL90N6F7 90N6F7 PowerFLAT
TM
5x6 Tape and reel
1
2
3
4
PowerF LAT™ 5x6
STL90N6F7
2/13
DocID027593 Rev 2
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics .................................................................... 5
3 Test circuits ..................................................................................... 7
4 Package information ....................................................................... 8
4.1 PowerFLAT™ 5X6 package information ........................................... 8
4.2 PowerFLAT™ 5x6 packing information ........................................... 10
5 Revision history ............................................................................ 12
STL90N6F7
Electrical ratings
DocID027593 Rev 2
3/13
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 60 V
V
GS
Gate-source voltage ± 20 V
I
D
(1)
Drain current (continuous) at T
C
= 25 °C 90 A
I
D
(1)
Drain current (continuous) at T
C
= 100 °C 66 A
I
DM
(1)(2)
Drain current (pulsed) 360 A
I
D
(3)
Drain current (continuous) at T
pcb
= 25 °C 21 A
I
D
(3)
Drain current (continuous) at T
pcb
= 100 °C 15 A
I
DM
(2)(3)
Drain current (pulsed) 84 A
P
TOT
(1)
Total dissipation at T
C
= 25 °C 94 W
P
TOT
(3)
Total dissipation at T
pcb
= 25 °C 4.8 W
T
stg
Storage temperature -55 to 175 °C
T
j
Max. operating junction temperature 175 °C
Notes:
(1)
This value is rated according to R
thj-c
(2)
Pulse width limited by safe operating area
(3)
This value is rated according to R
thj-pcb
Table 3: Thermal data
Symbol Parameter Value Unit
R
thj-pcb
(1)
Thermal resistance junction-pcb max. 31.3 °C/W
R
thj-case
Thermal resistance junction-case max. 1.6 °C/W
Notes:
(1)
When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec

STL90N6F7

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 60 V, 0.0046 Ohm typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet