Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4: On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1 mA, V
GS
= 0 V 60
V
I
DSS
Zero gate voltage
drain current
V
GS
= 0 V
V
DS
= 60 V
1 µA
I
GSS
Gate-body leakage
current
V
GS
= 20 V, V
DS
= 0 V
100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 μA 2
4 V
R
DS(on)
Static drain-source
on-resistance
V
GS
= 10 V, I
D
= 10.5 A
0.0046 0.0054 Ω
Table 5: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
- 1600 - pF
C
oss
Output capacitance - 880 - pF
C
rss
Reverse transfer
capacitance
- 66 - pF
Q
g
Total gate charge
V
DD
= 30 V, I
D
= 21 A,
V
GS
= 10 V
- 25 - nC
Q
gs
Gate-source charge - 7.2 - nC
Q
gd
Gate-drain charge - 8.1 - nC
Table 6: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 30 V, I
D
= 10.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
- 15 - ns
t
r
Rise time -
17.6
- ns
t
d(off)
Turn-off delay time - 24.4 - ns
t
f
Fall time -
7.8
- ns
Table 7: Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
SD
Forward on voltage I
SD
= 21 A, V
GS
= 0 V -
1.2 V
t
rr
Reverse recovery time
I
D
= 21 A,
di/dt = 100 A/µs
V
DD
= 48 V
- 39.6
ns
Q
rr
Reverse recovery charge - 36
nC
I
RRM
Reverse recovery current - 1.8
A
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
