2002 May 28 2
NXP Semiconductors Product data sheet
High-speed switching diode BAS216
FEATURES
• Small ceramic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max.
75 V
• Repetitive peak reverse voltage:
max.
85 V
• Repetitive peak forward current:
max.
500 mA.
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS216 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the SOD110 very small rectangular ceramic SMD
package.
handbook, 4 columns
MAM139
ka
cathode mark
top viewside viewbottom view
ak
Fig.1 Simplified outline (SOD110) and symbol.
Marking code: A6.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage − 85 V
V
R
continuous reverse voltage − 75 V
I
F
continuous forward current note 1 − 250 mA
I
FRM
repetitive peak forward current − 500 mA
I
FSM
non-repetitive peak forward current square wave; T
j
= 25 °C prior to
surge; see
Fig.4
t = 1 µs − 4 A
t = 1 ms − 1 A
t = 1 s − 0.5 A
P
tot
total power dissipation T
amb
= 25 °C; see Fig.2; note 1 − 400 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
