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BAS216,115
P1-P3
P4-P6
P7-P9
2002 May 28
4
NXP Semico
nductors
Product dat
a sheet
High-speed switching diode
BAS216
GRAPHICAL DAT
A
0
100
200
500
0
MSA570
250
P
tot
(mW)
T ( C)
o
amb
Device mounted on a
n FR4 printed-circuit boar
d.
Fig.2
Max
imum permissible total power
dissipation as a function of ambient
temperatur
e.
handbook, halfpage
02
300
I
F
(mA)
0
100
200
MBG382
1
V
F
(V)
(1)
(3)
(2)
(1)
T
j
= 150
°
C; typical values.
(2)
T
j
= 25
°
C; typical values.
(3)
T
j
= 25
°
C; maximum values.
Fig.3
For
ward current a
s a function of
forward
voltage.
handbook, full pagewidth
MBG704
10
t
p
(
µ
s)
1
I
FSM
(A)
10
2
10
−
1
10
4
10
2
10
3
10
1
Fig.4 Maximum permissible non-r
epetitive peak fo
rwar
d current as a function of pulse du
ration.
Based on square wave
currents.
T
j
= 25
°
C prior to surge.
2002 May 28
5
NXP Semico
nductors
Product dat
a sheet
High-speed switching diode
BAS216
10
5
10
4
10
3
10
2
10
200
0
MSA563
100
I
R
(nA)
T ( C)
o
j
75 V
25 V
V = 75 V
R
Fig.5
Reve
rse current as a function of junctio
n
temperatur
e.
Dotted line: maximum values.
Solid lines: typical values.
handbook, halfpage
04
8
1
2
1
6
0.6
0
0.4
0.2
0.5
MBH285
V
R
(V)
C
d
(pF)
Fig.6
Diode
capacitance a
s a function
of reverse
voltage; typical values.
f = 1 MHz;
T
j
= 25
°
C.
2002 May 28
6
NXP Semico
nductors
Product dat
a sheet
High-speed switching diode
BAS216
handbook, full pagewidth
t
rr
(1)
I
F
t
output signal
t
r
t
t
p
10%
90%
V
R
input signal
V = V I x R
RF
S
R = 50
S
Ω
I
F
D.U.T.
R = 50
i
Ω
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse reco
very voltage test ci
rcuit and waveforms.
(1)
I
R
= 1 mA.
t
r
t
t
p
10%
90%
I
input
signal
R = 50
S
Ω
I
R = 50
i
Ω
OSCILLOSCOPE
Ω
1 k
Ω
450
D.U.T.
MGA882
V
fr
t
output
signal
V
Fig.8 Forward re
covery voltage te
st circuit and
waveforms.
P1-P3
P4-P6
P7-P9
BAS216,115
Mfr. #:
Buy BAS216,115
Manufacturer:
NXP Semiconductors
Description:
DIODE GEN PURP 75V 250MA SOD2
Lifecycle:
New from this manufacturer.
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