BAS216,115

2002 May 28 4
NXP Semiconductors Product data sheet
High-speed switching diode BAS216
GRAPHICAL DATA
0 100 200
500
0
MSA570
250
P
tot
(mW)
T ( C)
o
amb
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible total power
dissipation as a function of ambient
temperature.
handbook, halfpage
02
300
I
F
(mA)
0
100
200
MBG382
1
V
F
(V)
(1) (3)(2)
(1) T
j
= 150 °C; typical values.
(2) T
j
= 25 °C; typical values.
(3) T
j
= 25 °C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
handbook, full pagewidth
MBG704
10
t
p
(µs)
1
I
FSM
(A)
10
2
10
1
10
4
10
2
10
3
10
1
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25 °C prior to surge.
2002 May 28 5
NXP Semiconductors Product data sheet
High-speed switching diode BAS216
10
5
10
4
10
3
10
2
10
2000
MSA563
100
I
R
(nA)
T ( C)
o
j
75 V
25 V
V = 75 V
R
Fig.5 Reverse current as a function of junction
temperature.
Dotted line: maximum values.
Solid lines: typical values.
handbook, halfpage
0481216
0.6
0
0.4
0.2
0.5
MBH285
V
R
(V)
C
d
(pF)
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25 °C.
2002 May 28 6
NXP Semiconductors Product data sheet
High-speed switching diode BAS216
handbook, full pagewidth
t
rr
(1)
I
F
t
output signal
t
r
t
t
p
10%
90%
V
R
input signal
V = V I x R
RF S
R = 50
S
I
F
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse recovery voltage test circuit and waveforms.
(1) I
R
= 1 mA.
t
r
t
t
p
10%
90%
I
input
signal
R = 50
S
I
R = 50
i
OSCILLOSCOPE
1 k 450
D.U.T.
MGA882
V
fr
t
output
signal
V
Fig.8 Forward recovery voltage test circuit and waveforms.

BAS216,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
DIODE GEN PURP 75V 250MA SOD2
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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