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VS-40MT120UHTAPBF

P1-P3P4-P6P7-P9P10-P12
VS-40MT120UHAPbF
www.vishay.com
Vishay Semiconductors
Revision: 28-Oct-16
1
Document Number: 94507
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
“Half Bridge” IGBT MTP (Ultrafast NPT IGBT), 80 A
FEATURES
• Ultrafast Non Punch Through (NPT) technology
•Positive V
CE(on)
temperature coefficient
• 10 μs short circuit capability
• Square RBSOA
•HEXFRED
®
antiparallel diodes with ultrasoft reverse
recovery and low V
F
•Al
2
O
3
DBC
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Benchmark efficiency above 20 kHz
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
1200 V
V
CE(on)
typical at V
GE
= 15 V 3.36 V
I
C
at T
C
= 25 °C 80 A
Speed 8 kHz to 30 kHz
Package MTP
Circuit Half bridge
MTP
Available
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter breakdown voltage V
CES
1200 V
Continuous collector current I
C
T
C
= 25 °C 80
A
T
C
= 104 °C 40
Pulsed collector current I
CM
160
Clamped inductive load current I
LM
160
Diode continuous forward current I
F
T
C
= 105 °C 21
Diode maximum forward current I
FM
160
Gate to emitter voltage V
GE
± 20
V
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500
Maximum power dissipation (only IGBT) P
D
T
C
= 25 °C 463
W
T
C
= 100 °C 185
VS-40MT120UHAPbF
www.vishay.com
Vishay Semiconductors
Revision: 28-Oct-16
2
Document Number: 94507
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter
breakdown voltage
V
(BR)CES
V
GE
= 0 V, I
C
= 250 μA 1200 - - V
Temperature coefficient of
breakdown voltage
V
(BR)CES
/T
J
V
GE
= 0 V, I
C
= 3 mA (25 °C to 125 °C) - +1.1 - V/°C
Collector to emitter saturation voltage V
CE(on)
V
GE
= 15 V, I
C
= 40 A - 3.36 3.59
V
V
GE
= 15 V, I
C
= 80 A - 4.53 4.91
V
GE
= 15 V, I
C
= 40 A, T
J
= 150 °C - 3.88 4.10
V
GE
= 15 V, I
C
= 80 A, T
J
= 150 °C - 5.35 5.68
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 500 μA 4 - 6
Temperature coefficient of
threshold voltage
V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C) - -12 - mV/°C
Transconductance g
fe
V
CE
= 50 V, I
C
= 40 A, PW = 80 μs - 35 - S
Zero gate voltage collector current I
CES
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 25 °C - - 250 μA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C - 0.4 1.0
mA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 150 °C - 0.2 10
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 250 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 40 A
V
CC
= 600 V
V
GE
= 15 V
- 399 599
nCGate to emitter charge (turn-on) Q
ge
-4365
Gate to collector charge (turn-on) Q
gc
- 187 281
Turn-on switching loss E
on
V
CC
= 600 V, I
C
= 40 A, V
GE
= 15 V,
R
g
= 5 , L = 200 μH, T
J
= 25 °C,
energy losses include tail and diode
reverse recovery
- 1.14 1.71
mJ
Turn-off switching loss E
off
- 1.35 2.02
Total switching loss E
tot
- 2.49 3.73
Turn-on switching loss E
on
V
CC
= 600 V, I
C
= 40 A, V
GE
= 15 V,
R
g
= 5 , L = 200 μH, T
J
= 125 °C,
energy losses include tail and diode
reverse recovery
- 1.60 2.40
Turn-off switching loss E
off
- 1.62 2.43
Total switching loss E
tot
- 3.22 4.82
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
- 5521 8282
pFOutput capacitance C
oes
- 380 570
Reverse transfer capacitance C
res
- 171 257
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 160 A
V
CC
= 1000 V, V
p
= 1200 V
R
g
= 5 , V
GE
= + 15 V to 0 V
Fullsquare
Short circuit safe operating area SCSOA
T
J
= 150 °C,
V
CC
= 900 V, V
p
= 1200 V
R
g
= 5 , V
GE
= + 15 V to 0 V
10 - - μs
VS-40MT120UHAPbF
www.vishay.com
Vishay Semiconductors
Revision: 28-Oct-16
3
Document Number: 94507
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DIODE SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage drop V
FM
I
C
= 40 A - 2.98 3.38
V
I
C
= 80 A - 3.90 4.41
I
C
= 40 A, T
J
= 125 °C - 3.08 3.39
I
C
= 80 A, T
J
= 125 °C - 4.29 4.72
I
C
= 40 A, T
J
= 150 °C - 3.12 3.42
Reverse recovery energy of the diode E
rec
V
GE
= 15 V, R
g
= 5 , L = 200 μH
V
CC
= 600 V, I
C
= 40 A
T
J
= 125 °C
- 574 861 μJ
Diode reverse recovery time t
rr
- 120 180 ns
Peak reverse recovery current I
rr
-4365A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
-40 - 150
°C
Storage temperature range T
Stg
-40 - 125
Junction to case
IGBT
R
thJC
- - 0.29
°C/WDiode - - 0.61
Case to sink per module R
thCS
Heatsink compound thermal conductivity = 1 W/mK - 0.06 -
Clearance
(1)
External shortest distance in air between 2 terminals 5.5 - -
mm
Creepage
(2)
Shortest distance along external surface of the
insulating material between 2 terminals
8--
Mounting torque to heatsink
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
3 ± 10 % Nm
Weight 66 g
P1-P3P4-P6P7-P9P10-P12

VS-40MT120UHTAPBF

Mfr. #:
Buy VS-40MT120UHTAPBF
Manufacturer:
Vishay Semiconductors
Description:
Bridge Rectifiers Output & SW Modules - MTP SWITCH-e3
Lifecycle:
New from this manufacturer.
Delivery:
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