VS-40MT120UHAPbF
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Vishay Semiconductors
Revision: 28-Oct-16
6
Document Number: 94507
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Fig. 13 - Typical Energy Loss vs. I
C
T
J
= 125 °C; L = 250 μH; V
CE
= 400 V
R
g
= 5 ; V
GE
= 15 V
Fig. 14 - Typical Switching Time vs. I
C
T
J
= 125 °C; L = 250 μH; V
CE
= 400 V
R
g
= 5 ; V
GE
= 15 V
Fig. 15 - Typical Energy Loss vs. R
g
T
J
= 150 °C; L = 250 μH; V
CE
= 600 V
I
CE
= 40 A; V
GE
= 15 V
Fig. 16 - Typical Switching Time vs. R
g
T
J
= 150 °C; L = 250 μH; V
CE
= 600 V
I
CE
= 40 A; V
GE
= 15 V
Fig. 17 - Typical Diode I
rr
vs. I
F
T
J
= 125 °C
Fig. 18 - Typical Diode I
rr
vs. R
g
T
J
= 125 °C; I
F
= 40 A
0 20406080100
I
C
(A)
0
600
1200
1800
2400
3000
3600
4200
4800
E
n
e
r
g
y
(
μ
J
)
E
OFF
E
ON
0 20 40 60 80 100
I
C
(A)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0 10 20 30 40 50 60
R
g
(
Ω
)
1000
2000
3000
4000
5000
6000
E
n
e
r
g
y
(
μ
J
)
E
ON
E
OFF
0 10 20 30 40 50 60
R
g
(
Ω
)
10
100
1000
10 000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
10 20 30 40 50 60 70
I
F
(A)
0
10
20
30
40
50
I
rr
(
A
)
R
g
=
5.0
Ω
R
g
=
10
Ω
R
g
=
30
Ω
R
g
=
50
Ω
0 10 20 30 40 50 60
R
g
(
Ω)
10
20
30
40
50
I
rr
(
A
)
