WeEn Semiconductors
BT169G
SCR
BT169G All information provided in this document is subject to legal disclaimers.
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 5 October 2016 3 / 13
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 600 V
V
RRM
repetitive peak reverse
voltage
- 600 V
I
T(AV)
average on-state current half sine wave; T
lead
≤ 83 °C; Fig. 1 - 0.5 A
I
T(RMS)
RMS on-state current half sine wave; T
lead
≤ 83 °C; Fig. 2; Fig. 3 - 0.8 A
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
Fig. 4; Fig. 5
- 8 AI
TSM
non-repetitive peak on-
state current
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms - 9 A
I
2
t I
2
t for fusing t
p
= 10 ms; SIN - 0.32 A²s
dI
T
/dt rate of rise of on-state
current
I
T
= 2 A; I
G
= 10 mA; dI
G
/dt = 100 mA/µs - 50 A/µs
I
GM
peak gate current - 1 A
V
RGM
peak reverse gate
voltage
- 5 V
P
GM
peak gate power - 2 W
P
G(AV)
average gate power over any 20 ms period - 0.1 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
001aab446
0.4
0.2
0.6
0.8
P
tot
(W)
0
101
113
89
77
125
I
T(AV)
(A)
0 0.60.40.20.1 0.50.3
4
2.2
1.9
2.8
T
lead(max)
(°C)
a = 1.57
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
