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BT169G,126
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
WeEn Semiconductors
BT169G
SCR
BT169G
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
5 October 2016
6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-lead)
thermal resistance
from junction to lead
Fig. 6
-
-
60
K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
printed circuit board mounted: lead
length = 4 mm
-
150
-
K/W
001aab451
1
10
2
10
-1
10
Z
th(j-lead)
(K/W)
10
-2
t
p
(s)
10
-5
1
10
10
-1
10
-2
10
-4
10
-3
t
p
P
t
Fig. 6. Transient thermal impedance from junction to lead as a function of pulse width
WeEn Semiconductors
BT169G
SCR
BT169G
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
5 October 2016
7 / 13
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 7
-
50
200
µA
I
L
latching current
V
D
= 12 V; I
G
= 0.5 mA; T
j
= 25 °C;
Fig. 8
-
2
6
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
-
2
5
mA
V
T
on-state voltage
I
T
= 1.2 A; T
j
= 25 °C;
Fig. 10
-
1.25
1.7
V
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 11
-
0.5
0.8
V
V
GT
gate trigger voltage
V
D
= 600 V; I
T
= 10 mA; T
j
= 125 °C;
Fig. 11
0.2
0.3
-
V
I
D
off-state current
V
D
= 600 V; R
GK(ext)
= 1 kΩ; T
j
= 125 °C
-
0.05
0.1
mA
I
R
reverse current
V
R
= 600 V; T
j
= 125 °C; R
GK(ext)
= 1 kΩ
-
0.05
0.1
mA
Dynamic characteristics
V
DM
= 402 V; T
j
= 125 °C; R
GK
= 1 kΩ;
(V
DM
= 67% of V
DRM
); exponential
waveform;
Fig. 12
500
800
-
V/µs
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit;
Fig. 12
-
25
-
V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 2 A; V
D
= 600 V; I
G
= 10 mA; dI
G
/
dt = 0.1 A/µs; T
j
= 25 °C
-
2
-
µs
t
q
commutated turn-off
time
V
DM
= 402 V; T
j
= 125 °C; I
TM
= 1.6 A;
V
R
= 35 V; (dI
T
/dt)
M
= 30 A/µs; dV
D
/
dt = 2 V/µs; R
GK(ext)
= 1 kΩ; (V
DM
=
67% of V
DRM
)
-
100
-
µs
WeEn Semiconductors
BT169G
SCR
BT169G
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
5 October 2016
8 / 13
T
j
(°C)
-50
150
100
0
50
001aab502
1
2
3
0
I
GT
I
GT(25°C)
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50
150
100
0
50
001aab503
1
2
3
0
I
L
I
L(25°C)
R
GK
= 1 kΩ
Fig. 8. Normalized latching current as a function of
junction temperature
T
j
(°C)
-50
150
100
0
50
001aab504
1
2
3
0
I
H
I
H(25°C)
R
GK
= 1 kΩ
Fig. 9. Normalized holding current as a function of
junction temperature
001aab454
V
T
(V)
0.4
2.8
2
1.2
2
3
1
4
5
I
T
(A)
0
(1)
(2)
(3)
V
o
= 1.067 V; R
s
= 0.187 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BT169G,126
Mfr. #:
Buy BT169G,126
Manufacturer:
WeEn Semiconductors
Description:
SCRs AMMORA SCR
Lifecycle:
New from this manufacturer.
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