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MIXA150Q1200VA

P1-P3P4-P6
MIXA150Q1200VA
preliminary
Buck Chopper
XPT IGBT Module
4/5
1/2
9
10
6/7
Part number
MIXA150Q1200VA
Backside: isolated
C25
CE(sat)
V V1,8
CES
220
1200
=
V
=
V
I
=
A
Features / Advantages: Applications: Package:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
● Switched-mode power supplies
● Switched reluctance motor drive
V1-A-Pack
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions.
20151102bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
MIXA150Q1200VA
preliminary
-di /dt = A/µs
T = °C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current
A
220
A
C
VJ
Symbol
Definition
Ratings
typ.
max.
min.
Conditions
150
V
V
CE(sat)
total power dissipation
695
W
collector emitter leakage current
6,5
V
turn-on delay time
70
ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitter voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
450
±30
T = °C
T = °C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
C GE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
C GE CE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current
V = ±20 V
GE
2,1
2,1
5,95,4
mA
0,1 mA
0,1
500
G(on)
total gate charge
V = V; V = 15 V; I = A
CE
Q
GE C
470
nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40 ns
250
ns
100
ns
14
mJ
16 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE
C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEma
1200
short circuit safe operating area
µs
SCSOA
10T = °C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
600
A
R
thJC
thermal resistance junction to case
0,18
K/W
V
RRM
V1200
max. repetitive reverse voltage
T = 25°C
VJ
T = 25°C
forward current
A
190
A
C
130T = °C
C
I
F25
I
F
T = 25°C
forward voltage
V
2,20
V
VJ
1,95T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current
mA
0,3
mA
VJ
0,8T = 125°C
VJ
I
R
R RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
20
µC
175
A
350
ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
I = A; V = 0 V
F
F GE
E
rec
10 mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case
0,28
K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = °C
VJ
VJ
150
6
150
150
150
150
4,7
4,7
4,7
600
900
2500
600
I
CM
1,8
R
thCH
thermal resistance case to heatsink
K/W
R
thCH
thermal resistance case to heatsink
K/W
IGBT
Diode
600 V
V = V
CEma
1200
80
80
80
80
125
125
125
125
125
nA
0,20
0,20
IXYS reserves the right to change limits, conditions and dimensions.
20151102bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
MIXA150Q1200VA
preliminary
Ratings
Part Number (Typ)
yywwA
Date Code Prod. Index
Lot No.:
Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)
leer (33), lfd.# (33-36)
I
X
M
A
150
Q
1200
VA
Part description
IGBT
XPT IGBT
Gen 1 / std
Buck Chopper
V1-A-Pack
Module
=
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm2,5
mounting torque
2
T
VJ
°C150
virtual junction temperature
-40
Weight
g37
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
V
V
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6,0
12,0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
100 A
per terminal
125-40
terminal to terminal
V1-A-Pack
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MIXA150Q1200VA 512328Blister 24MIXA150Q1200VAStandard
3600
ISOL
T
stg
°C125
storage temperature
-40
3000
threshold voltage
V
mΩ
V
0 max
R
0 max
slope resistance *
1,1
9,2
1,25
5,7
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
IGBT Diode
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions.
20151102bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
P1-P3P4-P6

MIXA150Q1200VA

Mfr. #:
Buy MIXA150Q1200VA
Manufacturer:
Littelfuse
Description:
IGBT Modules XPT IGBT Module
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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