OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MIXA150Q1200VA

P1-P3P4-P6
MIXA150Q1200VA
preliminary
Remarks / Bemerkungen:
1. Nominal distance mounting screws on heat sink: 52 mm / Nennabstand Befestigungsschrauben auf Kühlkörper: 52 mm
2. General tolerance / Allgemeintoleranz : DIN ISO 2768 -T1-c
3. Surface treatment of pins: tin plated (Sn) in hot dip / Oberflächenbehandlung der Pins: verzinnt (Sn) im Tauchbad
38
1
2
4
5
7
9
10
6
6
52 (see 1)
5,5
25
25,75
5,5
15
12,2
1x45°
±0,3
11,75
±0,3
0,5
*11
= =
*14 *7 *14*7
*14 *7 *14*7
25
25,75
±0,3
*11
*0
Ø 0,8
*
11,75
±0,3
Marking on product
Aufdruck der Typenbezeichnung
26
31,6
2
0,5
+0,2
3,6
±0,5
*0
*0
1
±0,2
2
+0,2
35
63
13
17
R2
max. 0,25
±0,25
Ø 6,1
Ø 2,5
1,5
Ø 2,1
4
6
4/5
1/2
9
10
6/7
Outlines V1-A-Pack
IXYS reserves the right to change limits, conditions and dimensions.
20151102bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
MIXA150Q1200VA
preliminary
0 1 2 3
0
50
100
150
200
250
300
0 50 100 150 200 250 300
0
5
10
15
20
25
30
35
0 1 2 3 4
0
50
100
150
200
250
3
0
0
V
CE
[V]
I
C
[A
]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5 6 7 8 9 10 11 12 13
0
50
100
150
200
250
3
0
0
0 100 200 300 400 500 600
0
5
10
15
20
13 V
0 2 4 6 8 10 12 14 16
10
12
14
16
18
20
22
E
[mJ]
E
off
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy
versus collector current
E
on
Fig. 6 Typ. switching energy
versus gate resistance
R
G
[]
E
[mJ]
I
C
[A]
V
GE
= 15 V
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 150 A
V
CE
= 600 V
R
G
= 4.7
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
= 150 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
E
on
E
off
E
rec
T
VJ
= 125°C
Fig. 7 Typ. transient thermal impedance
0.001 0.01 0.1 1 10
0.01
0.1
1
Z
thJC
[K/W]
t [s]
R
i
t
i
0.027 0.002
0.028 0.03
0.06 0.03
0.065 0.08
IGBT
IXYS reserves the right to change limits, conditions and dimensions.
20151102bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
MIXA150Q1200VA
preliminary
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
50
100
150
200
250
3
00
I
C
[A]
V
CE
[V]
T
VJ
= 25°C
T
VJ
= 125°C
1600 1800 2000 2200 2400 2600
6
7
8
9
10
11
di
F
/dt [A/μs]
E
rec
[mJ]
T
VJ
= 125°C
V
R
= 600 V
27
15
4.7
Fig. 1 Typ. Forward current
versus V
F
Fig. 2 Typ. reverse recovery
charge Q
rr
versus di/dt
Fig. 3 Typ. peak reverse current
I
RM
versus di/dt
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. recovery energy
E
rec
versus -di/dt
Fig. 7 Transient thermal impedance junction to case
0.001 0.01 0.1 1 10
0.01
0.1
1
Z
thJC
[K/
W]
t [s]
R
i
t
i
0.054 0.002
0.05 0.03
0.096 0.03
0.08 0.08
Diode
IXYS reserves the right to change limits, conditions and dimensions.
20151102bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
P1-P3P4-P6

MIXA150Q1200VA

Mfr. #:
Buy MIXA150Q1200VA
Manufacturer:
Littelfuse
Description:
IGBT Modules XPT IGBT Module
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet