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IR51H224

P1-P3P4-P6P7-P7
Preliminary Data Sheet No. PD60083-
K
Features
••
••
•
Output Power MOSFETs in half-bridge configuration
••
••
• High side gate drive designed for bootstrap operation
••
••
•
Bootstrap diode integrated into package (HD type)
••
••
•
Accurate timing control for both Power MOSFETs
Matched delay to get 50% duty cycle
Matched deadtime of 1.2us
••
••
• Internal oscillator with programmable frequency
SELF-OSCILLATING HALF BRIDGE
••
••
• 15.6V Zener clamped Vcc for offline operation
••
••
• Half-bridge output is out of phase with R
T
••
••
• Micropower startup
Description
The IR51H(D)XXX are complete high voltage, high speed, self-
oscillating half-bridge circuits. Proprietary HVIC and latch im-
mune CMOS technologies, along with the HEXFET
®
power
MOSFET technology, enable ruggedized single package construc-
tion. The front-end features a programmable oscillator which func-
tions similar to the CMOS 555 timer. The supply to the control
circuit has a zener clamp to simplify offline operation. The output
features two HEXFETs in a half-bridge configuration with an in-
ternally set deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and low side
V
IN
(max)
250V (IR51H(D)224)
400V (IR51H(D)320)
500V (IR51H(D)420)
Duty Cycle 50%
Deadtime 1.2µs
R
ds(on)
1.1
Ω (IR51H(D)224)
3.0
Ω
(IR51H(D)320)
3.6
Ω (IR51H(D)420)
P
D
(T
A
= 25
o
C
) 2.0W
Package
Typical Connection
Product Summary
f
=
+
1
14 R 75 C
TT
. × ( ) ×
Ω
1
D1
2
3
4
6
7
9
Vcc
COM
VO
V
IN
V
B
IR51H(D)XXX
VIN
COM
TO,
LOAD
DC Bus
R
T
C
T
R
T
C
T
External
Fast recovery diode D1 is
not required for HD type
IR51H(D)224
IR51H(D)320
IR51H(D)420
power MOSFETs are matched to simplify
use in 50% duty cycle applications. The
device can operate up to 500 volts.
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
9-Lead SIP
without leads 5 and 8
www.irf.com 1
2 www.irf.com
IR51H(D)224
IR51H(D)320
IR51H(D)420
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
NOTE 1:
This IC contains a zener clamp structure between V
CC
and COM which has a nominal breakdown voltage of 15.6V.
Please note that this supply pin should not be driven by a DC, low impedance power source greater than the V
CLAMP
specified in the Electrical Characteristics Section
Symbol Definition Minimum Maximum Units
V
IN
High voltage supply -224 - 0.3 250
-320 - 0.3 400
-420 - 0.3 500
V
B
High side floating supply
Vo - 0.3 Vo +2.5
V
O
Half-bridge output -0.3 V
IN
+ 0.3
V
RT
R
T
voltage - 0.3 V
cc
+ 0.3
V
CT
C
T
voltage - 0.3 V
cc
+ 0.3
I
cc
Supply current (note 1) — 25
I
RT
R
T
output current - 5 5
dV/dt Peak diode recovery — 3.5 V/ns
P
D
Package power dissipation
@ T
A
≤ +25°C — 2.00 W
Rth
JA
Thermal resistance, junction to ambient — 60
o
C/W
T
J
Junction temperature -55 150
T
S
Storage temperature -55 150
T
L
Lead temperature (soldering, 10 seconds) — 300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any
lead. The thermal resistance and power dissipation ratings are measured under board mounted and
still air conditions.
mA
o
C
V
www.irf.com 3
IR51H(D)224
IR51H(D)320
IR51H(D)420
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used
within the recommended conditions.
Symbol Definition Minimum Maximum Units
V
B
High side floating supply absolute voltage V
o
+ 10 V
o
+ V
clamp
V
IN
High voltage supply -224 — 250
-320
—
400
-420
—
500
V
O
Half-bridge output voltage
-3.0 (note 2)
V
IN
I
D
Continuous drain current (T
A
= 25°C)
-224
—
1.1
-320
—
0.9
-420 — 0.7
(T
A
= 85°C)
-224
—
0.7
-320 — 0.6
-420 — 0.5
I
CC
Supply current (note 3) 5 mA
T
A
Ambient temperature -40 125 °C
A
V
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 12V, T
A
= 25
o
C unless otherwise specified.
Symbol Definition Min. Typ. Max. Units Test Conditions
t
rr
Reverse recovery time (MOSFET body diode)
-224
—
200 —
-320 — 270
—
-420 — 240
—
Q
rr
Reverse recovery charge (MOSFET body diode)
-224
—
0.7 —
-320 — 0.6
—
-420 — 0.5
—
DR
T
duty cycle — 50 — % fosc = 20 kHz
I
F
=1.1A
I
F=900mA
I
F=700mA
I
F
=1.1A
I
F
=900mA
I
F
=700mA
ns
µC
di/dt
=100
A/µs
NOTE 2:
Care should be taken to avoid switching conditions where the V
S
node flies inductively below ground by more than 5V.
NOTE 3:
Enough current should be supplied to the V
CC
lead of the IC to keep the internal 15.6V zener diode clamping the
voltage at this lead.
P1-P3P4-P6P7-P7

IR51H224

Mfr. #:
Buy IR51H224
Manufacturer:
Infineon Technologies
Description:
IC HALF BRIDGE SELF-OSC 9-SIP
Lifecycle:
New from this manufacturer.
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