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IR51H(D)224
IR51H(D)320
IR51H(D)420
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
Symbol Definition Min. Typ. Max. Units Test Conditions
V
CCUV+
V
CC
supply undervoltage positive going — 8.4 — V
threshold
V
CCUV-
V
CC
supply undervoltage negative going — 8.0 — V
threshold
I
QCC
Quiescent V
CC
supply current — 300 — µA
V
CC
> V
CCUV
V
CLAMP
V
CC
zener shunt clamp voltage — 15.6 — V I
CC
= 5mA
I
QBS
Quiescent V
BS
supply current — 30
—
l
OS
Offset supply leakage current — — 50 V
B
= V
IN
= 500V
f
OSC
Oscillator frequency — 20 — R
T
= 35.7 kΩ
C
T
= 1 nF
— 100 — R
T
= 7.04 kΩ
C
T
= 1 nF
I
CT
C
T
input current — 0.001 1.0 µA
V
CTUV
C
T
undervoltage lockout — 100 — Note 2
V
RT+
R
T
high level output voltage, V
CC
- R
T
— 20 — I
RT
= 100µA
— 200 — I
RT
= -1mA
V
RT-
R
T
low level output voltage — 20 — I
RT
= 100µA
— 200 — I
RT
= -1mA
V
RTUV
R
T
undervoltage lockout, V
CC
- R
T
— 100 — I
RT
= 100µA
V
CT+
2/3 V
CC
threshold — 8.0 —
V
CT-
1/3 V
CC
threshold — 4.0 —
Static Electrical Characteristics
V
BIAS
(V
CC
, V
B
) = 12V, T
A
= 25
o
C unless otherwise specified.
Rds(on) Static-drain-to-source on-resistance
-224
—
1.1 —
-320 — 1.8
—
-420 — 3.0
—
V
SD
Diode forward voltage
-224
—
0.85 —
-320 — 0.7
—
-420 — 0.8
—
I
F
=1.1A
I
F=900mA
I
F=700mA
I
F
=1.1A
I
F
=900mA
I
F
=700mA
V
Ω
kHz
µA
kHz
mV
di/dt
=100
A/µs
