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- © Nexperia B.V. (year). All rights reserved.
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Team Nexperia
PMPB23XNE
20 V, single N-channel Trench MOSFET
30 November 2012 Product data sheet
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1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
2.1 kV ESD protection
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated, 100% solderable side pads for optical solder inspection
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portables
Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage - - 20 V
V
GS
gate-source voltage
T
j
= 25 °C
-12 - 12 V
I
D
drain current V
GS
= 4.5 V; T
amb
= 25 °C; t ≤ 5 s [1] - - 10.1 A
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 7 A; T
j
= 25 °C - 19 22
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
NXP Semiconductors
PMPB23XNE
20 V, single N-channel Trench MOSFET
PMPB23XNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 30 November 2012 2 / 14
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
7 D drain
8 S source
6
5
7
8
4
Transparent top view
1
2
3
DFN2020MD-6 (SOT1220)
017aaa255
G
D
S
3. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMPB23XNE DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
SOT1220
4. Marking
Table 4. Marking codes
Type number Marking code
PMPB23XNE 1K
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - 20 V
V
GS
gate-source voltage
T
j
= 25 °C
-12 12 V
V
GS
= 4.5 V; T
amb
= 25 °C; t ≤ 5 s [1] - 10.1 A
V
GS
= 4.5 V; T
amb
= 25 °C [1] - 7 A
I
D
drain current
V
GS
= 4.5 V; T
amb
= 100 °C [1] - 4.4 A
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - 24 A
P
tot
total power dissipation T
amb
= 25 °C [1] - 1.7 W

PMPB23XNEZ

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET PMPB23XNE/SOT1220/REEL 7" Q1/T
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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