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PMPB23XNEZ

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors
PMPB23XNE
20 V, single N-channel Trench MOSFET
PMPB23XNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 30 November 2012 3 / 14
Symbol Parameter Conditions Min Max Unit
T
amb
= 25 °C; t ≤ 5 s [1] - 3.5 W
T
sp
= 25 °C - 12.5 W
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
amb
= 25 °C [1] - 1.9 A
ESD maximum rating
V
ESD
electrostatic discharge voltage HBM [2] - 2100 V
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
[2] Measured between all pins.
T
j
(°C)
- 75 17512525 75- 25
017aaa123
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a
function of junction temperature
T
j
(°C)
- 75 17512525 75- 25
017aaa124
40
80
120
I
der
(%)
0
Fig. 2. Normalized continuous drain current as a
function of junction temperature
NXP Semiconductors
PMPB23XNE
20 V, single N-channel Trench MOSFET
PMPB23XNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 30 November 2012 4 / 14
017aaa940
1
10
-1
10
10
2
I
D
(A)
10
-2
V
DS
(V)
10
-2
10
2
1010
-1
1
t
p
= 100 µs
t
p
= 1 ms
t
p
= 10 ms
t
p
= 100 ms
DC; T
sp
= 25 °C
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
Limit R
DSon
= V
DS
/I
D
t
p
= 10 µs
I
DM
= single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 235 270 K/Win free air
[2] - 67 74 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air; t ≤ 5 s [2] - 33 36 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- 5 10 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
NXP Semiconductors
PMPB23XNE
20 V, single N-channel Trench MOSFET
PMPB23XNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 30 November 2012 5 / 14
017aaa542
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa543
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for drain 6 cm
2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C 20 - - V
V
GSth
gate-source threshold
voltage
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C 0.4 0.65 0.9 V
I
DSS
drain leakage current V
DS
= 20 V; V
GS
= 0 V; T
j
= 25 °C - - 1 µA
I
GSS
gate leakage current V
GS
= 8 V; V
DS
= 0 V; T
j
= 25 °C - - 10 µA
P1-P3P4-P6P7-P9P10-P12P13-P15

PMPB23XNEZ

Mfr. #:
Buy PMPB23XNEZ
Manufacturer:
Nexperia
Description:
MOSFET PMPB23XNE/SOT1220/REEL 7" Q1/T
Lifecycle:
New from this manufacturer.
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