OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SST5486-T1-E3

P1-P3P4-P6P7-P8
2N/SST5484 Series
Vishay Siliconix
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
1
N-Channel JFETs
2N5484 SST5484
2N5485 SST5485
2N5486 SST5486
PRODUCT SUMMARY
Part Number V
GS(off)
(V) V
(BR)GSS
Min (V) g
fs
Min (mS) I
DSS
Min (mA)
2N/SST5484 −0.3 to −3 −25 3 1
2N/SST5485 −0.5 to −4 −25 3.5 4
2N/SST5486 −2 to −6 −25 4 8
FEATURES BENEFITS APPLICATIONS
D Excellent High-Frequency Gain:
Gps 13 dB (typ) @ 400 MHz − 5485/6
D Very Low Noise: 2.5 dB (typ) @
400 MHz − 5485/6
D Very Low Distortion
D High AC/DC Switch Off-Isolation
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs
designed to provide high-performance amplification,
especially at high frequencies up to and beyond 400 MHz.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), packages provide low-cost options and are
available with tape-and-reel to support automated assembly
(see Packaging Information).
D
S
G
TO-236
(SOT-23
)
2
3
1
Top View
SST5484 (H4)*
SST5485 (H5)*
SST5486 (H6)*
*Marking Code for TO-236
D
S
G
TO-226AA
(TO-92)
Top View
2N5484
2N5485
2N5486
1
2
3
For applications information see AN102 and AN105.
2N/SST5484 Series
Vishay Siliconix
www.vishay.com
2
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage −25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature 300_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature −65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature −55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
a
350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR 2N SERIES (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N5484 2N5485 2N5486
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= −1 A , V
DS
= 0 V
−35 −25 −25 −25
V
Gate-Source Cutoff Voltage V
GS(off)
V
DS
= 15 V, I
D
= 10 nA −0.3 −3 −0.5 −4 −2 −6
V
Saturation Drain Current
b
I
DSS
V
DS
= 15 V, V
GS
= 0 V 1 5 4 10 8 20 mA
Gate Reverse Current
I
GSS
V
GS
= −20 V, V
DS
= 0 V −0.002 −1 −1 −1
nA
Gate Reverse Current I
GSS
T
A
= 100_C
−0.2 −200 −200 −200
nA
Gate Operating Current
c
I
G
V
DG
= 10 V, I
D
= 1 mA −20 pA
Gate-Source
Forward Voltage
c
V
GS(F)
I
G
= 10 mA , V
DS
= 0 V 0.8 V
Dynamic
Common-Source
Forward Transconductance
NO TAG
g
fs
V
DS
= 15 V, V
GS
= 0 V
3 6 3.5 7 4 8 mS
Common-Source
Output Conductance
NO TAG
g
os
V
DS
= 15 V
,
V
GS
= 0 V
f = 1 kHz
50 60 75
S
Common-Source
Input Capacitance
C
iss
2.2 5 5 5
Common-Source
Reverse Transfer Capacitance
C
rss
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
0.7 1 1 1
pF
Common-Source
Output Capacitance
C
oss
1 2 2 2
Equivalent Input
Noise Voltage
c
e
n
V
DS
= 15 V, V
GS
= 0 V
f = 100 Hz
10
nV⁄
√Hz
High-Frequency
Common-Source
d
Y
f(RE)
f = 100 MHz 5.5 2.5
mS
Common-Source
Transconductance
d
Y
fs(RE)
f = 400 MHz 5.5 3 3.5
mS
Common-Source
d
Y
(RE)
V
DS
= 15 V
f = 100 MHz 45 75
S
Common-Source
Output Conductance
d
Y
os(RE)
V
DS
= 15 V
V
GS
= 0 V
f = 400 MHz 65 100 100
S
Common-Source
d
Y
i(RE)
f = 100 MHz 0.05 0.1
mS
Common-Source
Input Conductance
d
Y
is(RE)
f = 400 MHz 0.8 1 1
mS
CS P Gi
d
G
V
DS
= 15 V, I
D
= 1 mA
f = 100 MHz
20 16 25
Common-Source Power Gain
d
G
ps
V
DS
= 15 V
f = 100 MHz 21 18 30 18 30
V
DS
= 15 V
I
D
= 4 mA
f = 400 MHz 13 10 20 10 20
V
DS
= 15 V, V
GS
= 0 V
R
G
= 1 M , f = 1 kHz
0.3 2.5 2.5 2.5
dB
Noise Figure
d
NF
V
DS
= 15 V, I
D
= 1 mA
R
G
= 1 k , f = 100 MHz
2 3
g
V
DS
= 15 V
I
D
= 4 mA
f = 100 MHz 1 2 2
I
D
=
4
m
A
R
G
= 1 k
f = 400 MHz 2.5 4 4
2N/SST5484 Series
Vishay Siliconix
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
3
SPECIFICATIONS FOR SST SERIES (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
SST5484 SST5485 SST5486
Parameter Symbol Test Conditions Typ
b
Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= −1 A , V
DS
= 0 V
−35 −25 −25 −25
V
Gate-Source Cutoff Voltage V
GS(off)
V
DS
= 15 V, I
D
= 10 nA −0.3 −3 −0.5 −4 −2 −6
V
Saturation Drain Current
b
I
DSS
V
DS
= 15 V, V
GS
= 0 V 1 5
4
10 8 20 mA
Gate Reverse Current
I
GSS
V
GS
= −20 V, V
DS
= 0 V −0.002 −1 −1 −1
nA
Gate Reverse Current I
GSS
T
A
= 100_C
−0.2 −200 −200 −200
nA
Gate Operating Current
c
I
G
V
DG
= 10 V, I
D
= 1 mA −20 pA
Gate-Source
Forward Voltage
c
V
GS(F)
I
G
= 10 mA , V
DS
= 0 V 0.8 V
Dynamic
Common-Source
Forward Transconductance
NO TAG
g
fs
V
DS
= 15 V, V
GS
= 0 V
3 6 3.5 7 4 8 mS
Common-Source
Output Conductance
NO TAG
g
os
V
DS
= 15 V
,
V
GS
= 0 V
f = 1 kHz
50 60 75
S
Common-Source
Input Capacitance
C
iss
2.2
Common-Source
Reverse Transfer
Capacitance
C
rss
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
0.7
pF
Common-Source
Output Capacitance
C
oss
1
Equivalent Input
Noise Voltage
c
e
n
V
DS
= 15 V, V
GS
= 0 V
f = 100 Hz
10
nV⁄
√Hz
High-Frequency
Common-Source
Y
f
f = 100 MHz 5.5
mS
Common-Source
Transconductance
Y
fs
f = 400 MHz 5.5
mS
Common-Source
Y
V
DS
= 15 V
f = 100 MHz 45
S
Common-Source
Output Conductance
Y
os
V
GS
= 0 V
f = 400 MHz 65
S
Common-Source
Y
i
f = 100 MHz 0.05
mS
Common-Source
Input Conductance
Y
is
f = 400 MHz 0.8
mS
Common
-
Source
G
V
DS
= 15 V, I
D
= 1 mA
f = 100 MHz
20
Common
-
So
u
rce
Power Gain
G
ps
V
DS
= 15 V
f = 100 MHz 21
I
D
= 4 mA
f = 400 MHz 13
V
DS
= 15 V, V
GS
= 0 V
R
G
= 1 M , f = 1 kHz
0.3
dB
Noise Figure NF
V
DS
= 15 V, I
D
= 1 mA
R
G
= 1 k , f = 100 MHz
2
g
V
DS
= 15 V
f = 100 MHz 1
I
D
= 4 mA
R
G
= 1 k
f = 400 MHz 2.5
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
b. Pulse test: PW v300 s duty cycle v3%.
c. This parameter not registered with JEDEC.
d. Not a production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
P1-P3P4-P6P7-P8

SST5486-T1-E3

Mfr. #:
Buy SST5486-T1-E3
Manufacturer:
Vishay
Description:
JFET P-CH 35V 8MA SOT-23
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet