2N/SST5484 Series
Vishay Siliconix
www.vishay.com
4
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
r
DS
g
os
r
DS
@ I
D
= 300 A, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
I
DSS
g
fs
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
V
GS(off)
− Gate-Source Cutoff Voltage (V)
V
DG
− Drain-Gate Voltage (V) I
D
− Drain Current (mA)
V
DS
− Drain-Source Voltage (V) V
DS
− Drain-Source Voltage (V)
Gate Leakage Current
0.1 mA
I
GSS
@ 25_C
T
A
= 25_C
T
A
= 125_C
I
GSS
@
125_C
Output Characteristics Output Characteristics
Common-Source Forward
Transconductance vs. Drain Current
0.1 1 10
10
8
0
V
GS(off)
= −3 V
T
A
= −55_C
25_C
125_C
−0.2 V
−0.4 V
−0.6 V
−0.8 V
−1.2 V
−1.0 V
V
GS
= 0 V
−0.6 V
−0.9 V
−1.2 V
−1.5 V
−1.8 V
V
GS
= 0 V
−0.3 V
10
8
0
6
4
2
20
0
16
12
8
4
0 −10−2 −4 −6 −8
100
80
0
60
40
20
500
0
400
300
200
100
0 −10−2 −4 −6 −8
012841620
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
100 nA
6
4
2
10
0
8
6
4
2
01024 68
15
0
12
9
6
3
01024 68
V
GS(off)
− Gate-Source Cutoff Voltage (V)
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= −2 V V
GS(off)
= −3 V
I
D
= 5 mA
1 mA
0.1 mA
I
D
= 5 mA
1 mA
−1.4 V
gos − Output Conductance (µS)
r
DS(on)
− Drain-Source On-Resistance ( Ω )
g
fs
− Forward Transconductance (mS)
I
DSS
− Saturation Drain Current (mA)
g
fs
− Forward Transconductance (mS)
I
G
− Gate LeakageI
D
− Drain Current (mA)
I
D
− Drain Current (mA)
